SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon NPN Power Transistors
2SC3163
·Wit
DESCRIPT...
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
NPN Power
Transistors
2SC3163
·Wit
DESCRIPTION With TO-220C package ·High breakdown voltage ·High speed switching
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 6 2 50 150 -55~150 UNIT V V V A A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 2.5 UNIT /W
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
NPN Power
Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN
2SC3163
SYMBOL
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA ; IB=0
400
V
VCEsat
Collector-emitter saturation voltage
IC=3A; IB=0.3A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=3A; IB=0.3A
1.5
V
ICEO
Collector cut-off current
VCE=400V ;IB=0
100
µA
ICBO
Collector cut-off current
VCB=500V ;IE=0
100
µA
IEBO
Emitter cut-off current
VEB=7V; IC=0
100
µA
hFE-1
DC current gain
IC=3A ; VCE=2V
15
hFE-2
DC current gain
IC=6A ; VCE=2V
8
fT
Transition frequency
IC=0.6A ; VCE=10V
20
MHz
2
SavantIC Semiconductor
www.DataSheet4U.com
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