2SA1216 Power Transistor Datasheet

2SA1216 Datasheet, PDF, Equivalent


Part Number

2SA1216

Description

Silicon PNP Power Transistor

Manufacture

Inchange Semiconductor Company Limited

Total Page 2 Pages
Datasheet
Download 2SA1216 Datasheet


2SA1216
INCHANGE Semiconductor
iscwww.DaStaSilhieceto4Un.coPm NP Power Transistor
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= -180V(Min)
·Good Linearity of hFE
·Complement to Type 2SC2922
APPLICATIONS
·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-180
V
VCEO
Collector-Emitter Voltage
-180
V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous -17 A
IBB Base Current-Continuous
Collector Power Dissipation
PC @ TC=25
TJ Junction Temperature
Tstg Storage Temperature Range
-5 A
200 W
150
-55~150
isc Product Specification
2SA1216
isc Websitewww.iscsemi.cn

2SA1216
INCHANGE Semiconductor
iscwww.DaStaSilhieceto4Un.coPm NP Power Transistor
isc Product Specification
2SA1216
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA ; IB= 0
-180
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -8A; IB=B -0.8A
ICBO Collector Cutoff Current
VCB= -180V; IE= 0
IEBO Emitter Cutoff Current
VEB= -5V; IC=0
-2.0 V
-100 μA
-100 μA
hFE DC Current Gain
IC= -8A; VCE= -4V
30 180
COB Output Capacitance
fT Current-Gain—Bandwidth Product
IE= 0; VCB= -10V;ftest= 1.0MHz
IE= 2A; VCE= -12V
500 pF
40 MHz
Switching times
ton Turn-on Time
tstg Storage Time
tf Fall Time
IC= -10A ,RL= 4Ω,
IB1= -IB2= -1A,VCC= -40V
0.3 μs
0.7 μs
0.2 μs
‹ hFE Classifications
OYP
G
30-60 50-100 70-140 90-180
isc Websitewww.iscsemi.cn
2


Features INCHANGE Semiconductor www.DataSheet4U.c om isc Product Specification isc Sili con PNP Power Transistor 2SA1216 DESC RIPTION ·High Collector-Emitter Breakd own VoltageV(BR)CEO= -180V(Min) ·Good Linearity of hFE ·Complement to Type 2 SC2922 APPLICATIONS ·Designed for aud io and general purpose applications. A BSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO L PARAMETER VALUE UNIT VCBO Collector -Base Voltage -180 V VCEO Collector -Emitter Voltage -180 V VEBO Emitte r-Base Voltage -5 V IC Collector Cu rrent-Continuous -17 A IB B Base Cu rrent-Continuous Collector Power Dissip ation @ TC=25℃ -5 A PC 200 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 isc Website:www.iscsemi.cn INCHAN GE Semiconductor www.DataSheet4U.com i sc Product Specification isc Silicon P NP Power Transistor ELECTRICAL CHARACTE RISTICS TC=25℃ unless otherwise speci fied SYMBOL PARAMETER CONDITIONS MIN 2 SA1216 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25.
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