K2749 2SK2749 Datasheet

K2749 Datasheet, PDF, Equivalent


Part Number

K2749

Description

2SK2749

Manufacture

Toshiba

Total Page 6 Pages
Datasheet
Download K2749 Datasheet


K2749
2SK2749
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MwwOwS.IDIIa)taSheet4U.com
2SK2749
Chopper Regulator, DCDC Converter and Motor Drive
Applications
Unit: mm
z Low drainsource ON resistance : RDS (ON) = 1.6 (typ.)
z High forward transfer admittance : |Yfs| = 5.0 S (typ.)
z Low leakage current
: IDSS = 100 μA (max) (VDS = 720 V)
z Enhancement mode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
900
900
±30
7
21
150
682
7
15
150
55~150
V
V
V
A
W
mJ
A
mJ
°C
°C
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
JEITA
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (chc)
Rth (cha)
0.833
50
°C / W
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 25.5 mH, IAR = 7 A, RG = 25
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1 2006-11-10

K2749
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Gatesource breakdown voltage
Drain cutoff current
Drainsource breakdown voltage
Gate threshold voltage
Drainsource ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±25 V, VDS = 0 V
IG = ±10 μA, VDS = 0 V
VDS = 720 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 3.5 A
VDS = 10 V, ID = 3.5 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
Rise time
tr
Switching time
Turnon time
Fall time
ton
tf
Turnoff time
Total gate charge (gatesource
plus gatedrain)
Gatesource charge
Gatedrain (“miller”) Charge
toff
Qg
Qgs VDD 400 V, VGS = 10 V, ID = 7 A
Qgd
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 7 A, VGS = 0 V
IDR = 7 A, VGS = 0 V
dIDR / dt = 100 A / μs
Marking
2SK2749
www.DataSheet4U.com
Min Typ. Max
― ― ±10
±30
― ― 100
900
2.0 4.0
1.6 2.0
1.25 5.0
1500
30
140
Unit
μA
V
μA
V
V
S
pF
35
80
ns
50
220
55
30
25
nC
Min Typ. Max Unit
―― 7 A
― ― 21 A
― ― −1.9 V
1400
ns
14 ― μC
TOSHIBA
K2749
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-10


Features 2SK2749 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII ) www.DataSheet4U.com 2SK2749 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enha ncement mode : RDS (ON) = 1.6 Ω (typ. ) : |Yfs| = 5.0 S (typ.) Unit: mm : ID SS = 100 μA (max) (VDS = 720 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Ab solute Maximum Ratings (Ta = 25°C) Cha racteristics Drain−source voltage Dra in−gate voltage (RGS = 20 kΩ) Gate source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 900 900 ±30 7 21 150 682 7 15 150 −55~150 Unit V V V A W mJ A mJ °C °C 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE Pulse (Note 1) Drain power dissipation (Tc = 25°C) S ingle pulse avalanche energy (Note 2) A valanche current Repetitive avalanche e nergy (Note 3) Channel temperature Stor age temperature range JEDEC JEITA TOSHIBA ― ― 2-16C1B Weight: 4.6 g (typ.) Note: Usi.
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