2SC3210 POWER TRANSISTOR Datasheet

2SC3210 Datasheet, PDF, Equivalent


Part Number

2SC3210

Description

SILICON POWER TRANSISTOR

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2SC3210 Datasheet


2SC3210
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-3PFa package
·Low collector saturation voltage
·High breakdown voltage
APPLICATIONS
·For high speed switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Product Specification
2SC3210
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
Ta=25
VALUE
500
400
7
10
20
5
100
3
150
-55~150
UNIT
V
V
V
A
A
A
W

2SC3210
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2SC3210
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A;L=25mH
VCEsat Collector-emitter saturation voltage IC=5A ;IB=1A
VBEsat
Base-emitter saturation voltage
IC=5A ;IB=1A
ICBO Collector cut-off current
VCB=500V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.1A ; VCE=5V
hFE-2
DC current gain
IC=5A ; VCE=5V
fT Transition frequency
IC=0.5A ; VCE=10V
Switching times
ton Turn-on time
tstg Storage time
tf Fall time
IC=5A; VCC=100V
IB1=-IB2=1A
MIN TYP. MAX UNIT
400 V
1.0 V
1.5 V
100 µA
100 µA
15
8
11 MHz
1.0 µs
2.5 µs
1.0 µs
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2SC3210 DESCRIPTION ·With TO-3PFa package ·Low collector saturation voltage ·High breakdown vo ltage APPLICATIONS ·For high speed swi tching applications PINNING PIN 1 2 3 B ase Collector Emitter DESCRIPTION Abso lute maximum ratings(Ta=25 ) SYMBOL VCB O VCEO VEBO IC ICM IB PARAMETER Collect or-base voltage Collector-emitter volta ge Emitter-base voltage Collector curre nt Collector current-peak Base current TC=25 PC Collector power dissipation Ta =25 Tj Tstg Junction temperature Storag e temperature 3 150 -55~150 CONDITIONS Open emitter Open base Open collector V ALUE 500 400 7 10 20 5 100 W UNIT V V V A A A SavantIC Semiconductor www.Data Sheet4U.com Product Specification Sil icon NPN Power Transistors 2SC3210 CH ARACTERISTICS Tj=25 unless otherwise sp ecified PARAMETER Collector-emitter sus taining voltage Collector-emitter satur ation voltage Base-emitter saturation voltage Collector cut-off cur.
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