2SC3211A POWER TRANSISTOR Datasheet

2SC3211A Datasheet, PDF, Equivalent


Part Number

2SC3211A

Description

SILICON POWER TRANSISTOR

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2SC3211A Datasheet


2SC3211A
SavantIC Semiconductor
wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors
DESCRIPTION
·With TO-3PFa package
·High VCBO
·Low collector saturation voltage
APPLICATIONS
·For high speed switching applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Product Specification
2SC3211A
ABSOLUTE MAXIMUM RATINGS(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
Open base
VEBO
Emitter-base voltage
Open collector
IC Collector current
ICP Collector current-peak
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
TC=25
Ta=25
VALUE
900
500
8
5
10
3
70
3
150
-55~150
UNIT
V
V
V
A
A
A
W

2SC3211A
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;L=25mH
VCE(sat) Collector-emitter saturation voltage IC=3A; IB=0.6A
VBE(sat) Base-emitter saturation voltage
IC=3A; IB=0.6A
ICBO Collector cut-off current
VCB=900V; IE=0
IEBO
hFE-1
Emitter cut-off current
DC current gain
VEB=5V; IC=0
IC=0.1A ; VCE=5V
hFE-2
DC current gain
IC=3A ; VCE=5V
fT Transition frequency
IC=0.5A ; VCE=10V
Switching times
ton Turn-on time
ts Storage time
tf Fall time
IC=3A; IB1=-IB2=0.6A
VCC=200V
Product Specification
2SC3211A
MIN TYP. MAX UNIT
500 V
1.0 V
1.5 V
0.1 mA
0.1 mA
15
8
3 MHz
1.2 µs
3.0 µs
1.2 µs
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2SC3211A DESCRIPTIO N ·With TO-3PFa package ·High VCBO · Low collector saturation voltage APPLIC ATIONS ·For high speed switching appli cations PINNING(see Fig.2) PIN 1 2 3 Ba se Collector Emitter DESCRIPTION ABSOL UTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICP IB PARAMETER Collecto r-base voltage Collector-emitter voltag e Emitter-base voltage Collector curren t Collector current-peak Base current T C=25 PC Collector power dissipation Ta= 25 Tj Tstg Junction temperature Storage temperature 3 150 -55~150 Open emitter Open base Open collector CONDITIONS VA LUE 900 500 8 5 10 3 70 W UNIT V V V A A A SavantIC Semiconductor www.DataShe et4U.com Product Specification Silico n NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAM ETER Collector-emitter sustaining volta ge Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter .
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