2SC3214 POWER TRANSISTOR Datasheet

2SC3214 Datasheet, PDF, Equivalent


Part Number

2SC3214

Description

SILICON POWER TRANSISTOR

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2SC3214 Datasheet


2SC3214
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2SC3214
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
APPLICATIONS
·For switching regulator and DC/DC
converter applications
PINNING (See Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
ICM Collector current-peak
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
1200
800
7
5
8
3
80
200
-65~200
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-mb
Thermal resistance from junction to mounting base
VALUE
1.0
UNIT
/W

2SC3214
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA ; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ; IC=0
VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.5A
VBEsat
Base-emitter saturation voltage
IC=2.5A; IB=0.5A
ICBO Collector cut-off current
VCB=960V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE DC current gain
IC=1.5A ; VCE=5V
Product Specification
2SC3214
MIN TYP. MAX UNIT
800 V
1200
V
7V
1.0 V
1.5 V
10 µA
10 µA
10
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2SC3214 DESCRIPTION ·With TO-3 package ·High voltage ,hi gh speed APPLICATIONS ·For switching r egulator and DC/DC converter applicatio ns PINNING (See Fig.2) PIN 1 2 3 Base E mitter Collector Fig.1 simplified outli ne (TO-3) and symbol DESCRIPTION Absol ute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMET ER Collector-base voltage Collector-emi tter voltage Emitter-base voltage Colle ctor current Collector current-peak Bas e current Collector power dissipation J unction temperature Storage temperature TC=25 CONDITIONS Open emitter Open bas e Open collector VALUE 1200 800 7 5 8 3 80 200 -65~200 UNIT V V V A A A W THE RMAL CHARACTERISTICS SYMBOL Rth j-mb PA RAMETER Thermal resistance from junctio n to mounting base VALUE 1.0 UNIT /W S avantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified.
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