2SC3223 POWER TRANSISTOR Datasheet

2SC3223 Datasheet, PDF, Equivalent


Part Number

2SC3223

Description

SILICON POWER TRANSISTOR

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2SC3223 Datasheet


2SC3223
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2SC3223
DESCRIPTION
·With TO-3 package
·High speed,high current
·Low saturation voltage
APPLICATIONS
·For high current high speed,high power
applications
PINNING (See Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
IB
PT
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Tmb=25
MAX
230
200
7
20
7
200
200
-65~200
UNIT
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-mb
Thermal resistance from junction to mounting base
VALUE
0.62
UNIT
/W

2SC3223
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ; IB=0
VCE(sat) Collector-emitter saturation voltage IC=10A; IB=1A
VBE(sat) Base-emitter saturation voltage
IC=10A; IB=1A
ICBO Collector cut-off current
At rated voltage
ICEO Collector cut-off current
IEBO Emitter cut-off current
At rated voltage
At rated voltage
hFE DC current gain
IC=20A ; VCE=2V
fT Transition frequency
IC=2A ; VCE=10V
Product Specification
2SC3223
MIN TYP. MAX UNIT
200 V
1.0 V
1.5 V
0.1 mA
0.1 mA
0.1 mA
10
20 MHz
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2SC3223 DESCRIPTION ·With TO-3 package ·High speed,high current ·Low saturation voltage APPLIC ATIONS ·For high current high speed,hi gh power applications PINNING (See Fig. 2) PIN 1 2 3 Base Emitter Collector Fig .1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings( Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltag e Collector-emitter voltage Emitter-bas e voltage Collector current Base curren t Total power dissipation Junction temp erature Storage temperature Tmb=25 Open emitter Open base Open collector CONDI TIONS MAX 230 200 7 20 7 200 200 -65~20 0 UNIT V V V A A W THERMAL CHARACTERIS TICS SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting ba se VALUE 0.62 UNIT /W SavantIC Semicon ductor www.DataSheet4U.com Product Spe cification Silicon NPN Power Transisto rs CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Colle.
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