2SC3235 POWER TRANSISTOR Datasheet

2SC3235 Datasheet, PDF, Equivalent


Part Number

2SC3235

Description

SILICON POWER TRANSISTOR

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2SC3235 Datasheet


2SC3235
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220 package
·High voltage,high speed
·Low saturation voltage
APPLICATIONS
·For high voltage ,high speed and
high power switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Product Specification
2SC3235
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-Peak
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
500
400
7
2
4
20
150
-55~150
UNIT
V
V
V
A
A
W

2SC3235
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2 A
VBEsat Base-emitter saturation voltage
IC=1A; IB=0.2 A
ICBO Collector cut-off current
VCB=400V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE DC current gain
IC=0.1A ; VCE=5V
Product Specification
2SC3235
MIN TYP. MAX UNIT
400 V
500 V
7V
1.0 V
1.5 V
10 µA
10 µA
20 50
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2SC3235 DESCRIPTION ·With TO-220 package ·High voltage,h igh speed ·Low saturation voltage APPL ICATIONS ·For high voltage ,high speed and high power switching applications PINNING PIN 1 2 3 Base Collector;connec ted to mounting base Emitter DESCRIPTIO N Absolute maximum ratings(Ta=25 ) SYM BOL VCBO VCEO VEBO IC ICM PC Tj Tstg PA RAMETER Collector-base voltage Collecto r-emitter voltage Emitter-base voltage Collector current Collector current-Pea k Collector power dissipation Junction temperature Storage temperature TC=25 C ONDITIONS Open emitter Open base Open c ollector VALUE 500 400 7 2 4 20 150 -55 ~150 UNIT V V V A A W SavantIC Semicon ductor www.DataSheet4U.com Product Spe cification Silicon NPN Power Transisto rs CHARACTERISTICS Tj=25 unless otherwi se specified PARAMETER Collector-emitte r breakdown voltage Collector-base brea kdown voltage Emitter-base breakdown voltage Collector-emitter satu.
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