2SC3255 POWER TRANSISTOR Datasheet

2SC3255 Datasheet, PDF, Equivalent


Part Number

2SC3255

Description

SILICON POWER TRANSISTOR

Manufacture

SavantIC

Total Page 4 Pages
Datasheet
Download 2SC3255 Datasheet


2SC3255
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220 package
·Complement to type 2SA1291
·Low collector saturation voltage
·High speed switching time
APPLICATIONS
·High current switching applications
·Power amplifications
·Invertrers ,converters
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Product Specification
2SC3255
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
80
60
5
10
12
40
150
-55~150
UNIT
V
V
V
A
A
W

2SC3255
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector -emitter breakdown voltage IC=1mA ,IB=;
V(BR)CBO Collector-base breakdown voltage
IC=1mA ,IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ,IC=0
VCEsat Collector-emitter saturation voltage IC=5A; IB=0.25A
ICBO Collector cut-off current
VCB=40V; IE=0
IEBO Emitter cut-off current
VEB=4V; IC=0
hFE DC current gain
IC=1A ; VCE=2V
fT Transition frequency
IC=1A ; VCE=5V
Switching times
ton Turn-on time
ts Storage time
tf Fall time
IC=5.0A IB1=- IB2=0.25A
RL=6.67C;VCCD20V
Product Specification
2SC3255
MIN TYP. MAX UNIT
60 V
80 V
5V
0.4 V
100 µA
100 µA
70 280
100 MHz
0.1 µs
0.5 µs
0.1 µs
hFE Classifications
QR
S
70-140 100-200 140-280
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2SC3255 DESCRIPTION ·With TO-220 package ·Complement to type 2SA1291 ·Low collector saturation voltage ·High speed switching time AP PLICATIONS ·High current switching app lications ·Power amplifications ·Inve rtrers ,converters PINNING PIN 1 2 3 Ba se Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO I C ICM PC Tj Tstg PARAMETER Collector-ba se voltage Collector-emitter voltage Em itter-base voltage Collector current Co llector current-peak Collector power di ssipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitt er Open base Open collector VALUE 80 60 5 10 12 40 150 -55~150 UNIT V V V A A W SavantIC Semiconductor www.DataSheet 4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS T j=25 unless otherwise specified PARAMET ER Collector -emitter breakdown voltage Collector-base breakdown volta.
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