2SC3257 POWER TRANSISTOR Datasheet

2SC3257 Datasheet, PDF, Equivalent


Part Number

2SC3257

Description

SILICON POWER TRANSISTOR

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2SC3257 Datasheet


2SC3257
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220 package
·High collector breakdown voltage
·Excellent switching times
APPLICATIONS
·Switching regulator and high voltage
switching applications
·High speed DC-DC converter applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Product Specification
2SC3257
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
Ta=25
VALUE
250
200
7
10
15
2
1.5
40
150
-55~150
UNIT
V
V
V
A
A
A
W

2SC3257
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2SC3257
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0
200
V
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
250
V
VCEsat Collector-emitter saturation voltage IC=5A;IB=0.5A
1.0 V
VBEsat
Base-emitter saturation voltage
IC=5A;IB=0.5A
1.5 V
ICBO Collector cut-off current
IEBO Emitter cut-off current
VCB=200V;IE=0
VEB=7V; IC=0
100 µA
1.0 mA
hFE-1
DC current gain
IC=10mA ; VCE=5V
15
hFE-2
DC current gain
IC=5A ; VCE=5V
20 80
Switching times
tr Rise time
ts Storage time
tf Fall time
IB1=-IB2=0.6A;VCC=150V
RL=25?
1.0 µs
2.5 µs
1.0 µs
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2SC3257 DESCRIPTION ·With TO-220 package ·High collector breakdown voltage ·Excellent switchin g times APPLICATIONS ·Switching regula tor and high voltage switching applicat ions ·High speed DC-DC converter appli cations PINNING PIN 1 2 3 Base Collecto r;connected to mounting base Emitter DE SCRIPTION Absolute maximum ratings (Ta =25 ) SYMBOL VCBO VCEO VEBO IC ICM IB P ARAMETER Collector-base voltage Collect or-emitter voltage Emitter-base voltage Collector current Collector current-pe ak Base current TC=25 PC Collector powe r dissipation Ta=25 Tj Tstg Junction te mperature Storage temperature 40 150 -5 5~150 CONDITIONS Open emitter Open base Open collector VALUE 250 200 7 10 15 2 1.5 W UNIT V V V A A A SavantIC Semic onductor www.DataSheet4U.com Product S pecification Silicon NPN Power Transis tors CHARACTERISTICS Tj=25 unless other wise specified PARAMETER Collector-emitter breakdown voltage Collect.
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