2SC4460 Power Transistors Datasheet

2SC4460 Datasheet, PDF, Equivalent


Part Number

2SC4460

Description

Silicon NPN Power Transistors

Manufacture

Inchange Semiconductor

Total Page 4 Pages
Datasheet
Download 2SC4460 Datasheet


2SC4460
Inchange Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
With TO-3PML package
High breakdown voltage, high reliability.
Fast switching speed.
Wide area of safe operation
APPLICATIONS
For switching regulator applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Product Specification
2SC4460
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
800
500
7
15
25
4
55
3
150
-55~150
UNIT
V
V
V
A
A
A
W

2SC4460
Inchange Semiconductor
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CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-base breakdown voltage
IC=1mA; IE=0
V(BR)CEO Collector-emitter breakdown voltage IC=5mA; RBE=
V(BR)EBO Emitter-base breakdown voltage
VCEX(SUS) Collector-emitter sustaining voltage
VCEsat Collector-emitter saturation voltage
IE=1mA; IC=0
IC=5A;IB1=2A;
IB2=-2A;L=500 H
IC=6A;IB=1.2 A
VBEsat Base-emitter saturation voltage
IC=6A;IB=1.2A
ICBO Collector cut-off current
VCB=500V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1.2A ; VCE=5V
hFE-2
DC current gain
IC=6A ; VCE=5V
fT Transition frequency
IC=1.2A ; VCE=10V
COB Output capacitance
VCB=10V;f=1MHz
Switching times
ton Turn-on time
tstg Storage time
tf Fall time
IC=5IB1=-2.5IB2=7A;
RL=28.6
VCC=200V
‹ hFE-1 classifications
L MN
15-30
20-40
30-50
Product Specification
2SC4460
MIN TYP. MAX UNIT
800 V
500 V
7V
500 V
1.0 V
1.5 V
10 A
10 A
15 50
8
18 MHz
160 pF
0.5 s
3.0 s
0.3 s
2


Features Inchange Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2SC4460 DESCRIPTION ¡¤ With TO-3PML package ¡¤ High br eakdown voltage, high reliability. ¡¤ Fast switching speed. ¡¤ Wide area o f safe operation APPLICATIONS ¡¤ For switching regulator applications PINNIN G PIN 1 2 3 Base Collector Fig.1 simpli fied outline (TO-3PML) and symbol Emitt er DESCRIPTION Absolute maximum rating s(Ta=25¡æ ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector cu rrent-peak Base current TC=25¡æ PC Co llector power dissipation 3 Tj Tstg Jun ction temperature Storage temperature 1 50 -55~150 ¡æ ¡æ CONDITIONS Open em itter Open base Open collector VALUE 80 0 500 7 15 25 4 55 W UNIT V V V A A A Inchange Semiconductor www.DataSheet4U. com Product Specification Silicon NPN Power Transistors 2SC4460 CHARACTERI STICS Tj=25¡æ unless otherwise specified PARAMETER Collector-base breakdown volta.
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