AOU400 Effect Transistor Datasheet

AOU400 Datasheet, PDF, Equivalent


Part Number

AOU400

Description

N-Channel Enhancement Mode Field Effect Transistor

Manufacture

Alpha & Omega Semiconductors

Total Page 5 Pages
Datasheet
Download AOU400 Datasheet


AOU400
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AOU400
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOU400 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AOU400 is Pb-free
(meets ROHS & Sony 259 specifications). AOU400L
is a Green Product ordering option. AOU400 and
AOU400L are electrically identical.
Features
VDS (V) = 60V
ID = 38A (VGS = 10V)
RDS(ON) < 20m(VGS = 10V)
RDS(ON) < 25m(VGS = 4.5V)
TO-251
Top View
Drain Connected to
Tab
D
G
S
GD S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current B
TC=25°C G
TC=100°C B
Pulsed Drain Current
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
VGS
ID
IDM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
Junction and Storage Temperature Range
PD
TJ, TSTG
Maximum
60
±20
38
27
60
30
140
60
30
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
51
1.4
Max
60
2.5
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W

AOU400
AOU400
Ewlwewc.tDraictaaSlhCeheta4rUa.ccotmeristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=48V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A
VGS=4.5V, ID=20A
Forward Transconductance
VDS=5V, ID=20A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
60
1
60
1
5
100
2.1 3
16
31
20
5.6
0.74
20
25
1
4
V
µA
nA
V
A
m
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=30V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
1920
155
116
0.65
2300
0.8
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time
Qrr Body Diode Reverse Recovery Charge
VGS=10V, VDS=30V, ID=20A
VGS=10V, VDS=30V, RL=1.5,
RGEN=3
IF=20A, dI/dt=100A/µs
IF=20A, dI/dt=100A/µs
47.6 68
24.2 30
6
14.4
7.4
5.1
28.2
5.5
34 41
46
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
Rev2: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.


Features www.DataSheet4U.com AOU400 N-Channel En hancement Mode Field Effect Transistor General Description The AOU400 uses adv anced trench technology to provide exce llent RDS(ON) and low gate charge. This device is suitable for use as a load s witch or in PWM applications. Standard Product AOU400 is Pb-free (meets ROHS & Sony 259 specifications). AOU400L is a Green Product ordering option. AOU400 and AOU400L are electrically identical. Features VDS (V) = 60V ID = 38A (VGS = 10V) RDS(ON) < 20mΩ (VGS = 10V) RDS (ON) < 25mΩ (VGS = 4.5V) TO-251 D To p View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Sour ce Voltage Continuous Drain Current B P ulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH C TC=25°C Power Dissipation TC=100°C Ju nction and Storage Temperature Range Th ermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case B A B Maximum 60 ±20 38.
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