AOU413

www.DataSheet4U.com AOU413 P-Channel Enhancement Mode Field Effect Transistor General Description The AOU413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Standard Product AOU413 is Pb-free (meets ROHS & Sony 259 specifications). AOU413L is a Green Product ordering option. AOU413 and AOU413L are electrically identical. TO-251 Features VDS (V) = -40V ID = -12A (VGS = -10V) RDS(ON) < 45mΩ (VGS = -10V) RDS(ON) < 69mΩ (VGS = -4.5V) D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation B TC=100°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Case C Steady-State Steady-State C Maximum -40 ±20 -12 -12 -30 -12 30 50 25 -55 to 175 Units V V A A mJ W °C TA=25°C G TA=100°C G ID IDM IAR EAR PD TJ, TSTG Symbol RθJA RθJL Typ 40 2.5 Max 50 3 Units °C/W °C/W Alpha & Omega Semiconductor, Ltd. AOU413 www.DataSheet4U.com Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-32V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=-...