2SC3277 POWER TRANSISTOR Datasheet

2SC3277 Datasheet, PDF, Equivalent


Part Number

2SC3277

Description

SILICON POWER TRANSISTOR

Manufacture

SavantIC

Total Page 4 Pages
Datasheet
Download 2SC3277 Datasheet


2SC3277
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-3PN package
·High voltage ,high current
·Fast switching speed
·Wide area of safe operation
APPLICATIONS
·400V/10A switching regulator applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Product Specification
2SC3277
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
500
400
7
10
20
90
150
-55~150
UNIT
V
V
V
A
A
W

2SC3277
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;RBE=;
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=6A ;IB=1.2A
VBEsat
Base-emitter saturation voltage
IC=6A ;IB=1.2A
ICBO Collector cut-off current
VCB=400V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1.2A ; VCE=5V
hFE-2
DC current gain
IC=6A ; VCE=5V
fT Transition frequency
IC=1.2A ; VCE=10V
COB Output capacitance
IE=0 ; VCB=10V;f=1MHz
Switching times
ton Turn-on time
tstg Storage time
tf Fall time
IC=7A;IB1=-IB2=1.4A
RL=28.6E,PW=20µs
VCC=200V
Product Specification
2SC3277
MIN TYP. MAX UNIT
400 V
500 V
7V
1.0 V
1.5 V
10 µA
10 µA
15 50
8
20 MHz
120 pF
1.0 µs
2.5 µs
1.0 µs
hFE-1 Classifications
LM
N
15-30
20-40
30-50
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2SC3277 DESCRIPTION ·With TO-3PN package ·High voltage , high current ·Fast switching speed ·W ide area of safe operation APPLICATIONS ·400V/10A switching regulator applica tions PINNING PIN 1 2 3 Base Collector; connected to mounting base Emitter Fig. 1 simplified outline (TO-3PN) and symbo l DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base vol tage Collector-emitter voltage Emitter- base voltage Collector current Collecto r current-peak Collector power dissipat ion Junction temperature Storage temper ature TC=25 CONDITIONS Open emitter Ope n base Open collector VALUE 500 400 7 1 0 20 90 150 -55~150 UNIT V V V A A W S avantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER C ollector-emitter breakdown voltage Collector-base breakdown voltage .
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