2SC3280 POWER TRANSISTOR Datasheet

2SC3280 Datasheet, PDF, Equivalent


Part Number

2SC3280

Description

SILICON POWER TRANSISTOR

Manufacture

SavantIC

Total Page 4 Pages
Datasheet
Download 2SC3280 Datasheet


2SC3280
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-3PL package
·Complement to type 2SA1301
APPLICATIONS
·Power amplifier applications
·Recommended for 80W high fidelity audio
frequency amplifier output stage
PINNING
PIN
DESCRIPTION
1 Base
2
Collector;connected to
mounting base
3 Emitter
Product Specification
2SC3280
Fig.1 simplified outline (TO-3PL) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
IC
Emitter-base voltage
Collector current
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
160
160
5
12
1.2
120
150
-55~150
UNIT
V
V
V
A
A
W

2SC3280
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=8A IB=0.8A
VBE Base-emitter voltage
IC=6A ; VCE=5V
ICBO Collector cut-off current
VCB=160V IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=6A ; VCE=5V
fT Transition frequency
IC=1A ; VCE=5V
COB Collector output capacitance
f=1MHz;VCB=10V
Product Specification
2SC3280
MIN TYP. MAX UNIT
160 V
2.5 V
1.5 V
5 µA
5 µA
55 160
35
30 MHz
220 pF
hFE-1 classifications
RO
55-110
80-160
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2SC3280 DESCRIPTION ·With TO-3PL package ·Complement to type 2SA1301 APPLICATIONS ·Power ampli fier applications ·Recommended for 80W high fidelity audio frequency amplifie r output stage PINNING PIN 1 2 3 Base C ollector;connected to mounting base Emi tter DESCRIPTION Fig.1 simplified outl ine (TO-3PL) and symbol Absolute maxim um ratings(Ta=25 ) SYMBOL VCBO VCEO VEB O IC IB PC Tj Tstg PARAMETER Collector- base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipatio n Junction temperature Storage temperat ure TC=25 CONDITIONS Open emitter Open base Open collector VALUE 160 160 5 12 1.2 120 150 -55~150 UNIT V V V A A W S avantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER C ollector-emitter breakdown voltage Collector-emitter saturation vol.
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