2SC3281 POWER TRANSISTOR Datasheet

2SC3281 Datasheet, PDF, Equivalent


Part Number

2SC3281

Description

SILICON POWER TRANSISTOR

Manufacture

SavantIC

Total Page 4 Pages
Datasheet
Download 2SC3281 Datasheet


2SC3281
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-3PL package
·Complement to type 2SA1302
APPLICATIONS
·Power amplifier applications
·Recommended for 100W high fidelity audio
frequency amplifier output stage
PINNING
PIN
DESCRIPTION
1 Base
2
Collector;connected to
mounting base
3 Emitter
Product Specification
2SC3281
Fig.1 simplified outline (TO-3PL) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
200
200
5
15
1.5
150
150
-55~150
UNIT
V
V
V
A
A
W

2SC3281
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=8A ;IB=0.8A
VBE Base-emitter voltage
IC=8A ; VCE=5V
ICBO Collector cut-off current
VCB=200V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=8A ; VCE=5V
fT Transition frequency
IC=1A ; VCE=5V
COB Collector output capacitance
f=1MHz;VCB=10V
hFE-1 classifications
RO
55-110
80-160
Product Specification
2SC3281
MIN TYP. MAX UNIT
200 V
2.5 V
1.5 V
5 µA
5 µA
55 160
35
25 MHz
270 pF
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2SC3281 DESCRIPTION ·With TO-3PL package ·Complement to type 2SA1302 APPLICATIONS ·Power ampli fier applications ·Recommended for 100 W high fidelity audio frequency amplifi er output stage PINNING PIN 1 2 3 Base Collector;connected to mounting base Em itter DESCRIPTION Fig.1 simplified out line (TO-3PL) and symbol Absolute maxi mum ratings(Ta=25 ) SYMBOL VCBO VCEO VE BO IC IB PC Tj Tstg PARAMETER Collector -base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipati on Junction temperature Storage tempera ture TC=25 CONDITIONS Open emitter Open base Open collector VALUE 200 200 5 15 1.5 150 150 -55~150 UNIT V V V A A W SavantIC Semiconductor www.DataSheet4U. com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=2 5 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation vo.
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