2SC3285 POWER TRANSISTOR Datasheet

2SC3285 Datasheet, PDF, Equivalent


Part Number

2SC3285

Description

SILICON POWER TRANSISTOR

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2SC3285 Datasheet


2SC3285
SavantIC Semiconductor
wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors
DESCRIPTION
·With TO-3PN package
·High speed switching
·Good linearity of hFE
·High VCBO
APPLICATIONS
·For high speed switching applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2
Collector;connected to
mounting base
3 Emitter
Product Specification
2SC3285
Fig.1 simplified outline (TO-3PN) and symbol
ABSOLUTE MAXIMUM RATINGS(TC=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
Open base
VEBO
Emitter-base voltage
Open collector
IC Collector current
ICP Collector current-peak
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
TC=25
Ta=25
VALUE
1000
800
7
3
6
2
70
2.5
150
-55~150
UNIT
V
V
V
A
A
A
W

2SC3285
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2SC3285
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=0.5A ; IE=0
VCE(sat) Collector-emitter saturation voltage IC=2A; IB=0.4A
VBE(sat) Base-emitter saturation voltage
IC=2A; IB=0.4A
ICBO Collector cut-off current
VCB=1000V; IE=0
IEBO Emitter cut-off current
VEB=7V; IC=0
hFE DC current gain
IC=2A ; VCE=5V
fT Transition frequency
IC=0.2A ; VCE=5V
Switching times
800 V
1.5 V
1.5 V
50 µA
50 µA
6
4 MHz
ton Turn-on time
ts Storage time
tf Fall time
IC=2A; IB1=0.4A;IB2=-0.8A
VCC=250V
1.0 µs
2.5 µs
0.5 µs
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO -3PN package ·High speed switching ·G ood linearity of hFE ·High VCBO 2SC32 85 APPLICATIONS ·For high speed switc hing applications PINNING(see Fig.2) PI N 1 2 3 Base Collector;connected to mou nting base Emitter Fig.1 simplified out line (TO-3PN) and symbol DESCRIPTION A BSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL VCBO VCEO VEBO IC ICP IB PARAMETER Coll ector-base voltage Collector-emitter vo ltage Emitter-base voltage Collector cu rrent Collector current-peak Base curre nt TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Sto rage temperature 2.5 150 -55~150 Open e mitter Open base Open collector CONDITI ONS VALUE 1000 800 7 3 6 2 70 W UNIT V V V A A A SavantIC Semiconductor www.D ataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTER ISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter sa.
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