2SC3296 POWER TRANSISTOR Datasheet

2SC3296 Datasheet, PDF, Equivalent


Part Number

2SC3296

Description

SILICON POWER TRANSISTOR

Manufacture

SavantIC

Total Page 4 Pages
Datasheet
Download 2SC3296 Datasheet


2SC3296
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220Fa package
·Wide area of safe operation
·Complement to type 2SA1304
APPLICATIONS
·Power amplifier applications
·Vertical output applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Product Specification
2SC3296
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
VEBO
Collector-emitter voltage
Emitter-base voltage
IC Collector current
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25
TC=25
VALUE
150
150
5
1.5
0.5
2
20
150
-55~150
UNIT
V
V
V
A
A
W

2SC3296
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA , IB=0
VCEsat Collector-emitter saturation voltage IC=0.5A ;IB=50mA
VBE Base-emitter on voltage
IC=0.5A ; VCE=10V
ICBO Collector cut-off current
VCB=120V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE DC current gain
IC=0.5A ; VCE=10V
COB Output capacitance
IE=0 ; VCB=10V;f=1MHz
fT Transition frequency
IC=0.5A ; VCE=10V
Product Specification
2SC3296
MIN TYP. MAX UNIT
150 V
1.5 V
0.85 V
10 µA
10 µA
40 140
35 pF
4 MHz
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2SC3296 DESCRIPTION ·With TO-220Fa package ·Wide area of safe operation ·Complement to type 2S A1304 APPLICATIONS ·Power amplifier ap plications ·Vertical output applicatio ns PINNING PIN 1 2 3 DESCRIPTION Base C ollector Emitter Absolute maximum rati ngs (Ta=25 ) SYMBOL VCBO VCEO VEBO IC I B PARAMETER Collector-base voltage Coll ector-emitter voltage Emitter-base volt age Collector current Base current Ta=2 5 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage te mperature 20 150 -55~150 CONDITIONS Ope n emitter Open base Open collector VALU E 150 150 5 1.5 0.5 2 W UNIT V V V A A SavantIC Semiconductor www.DataSheet4U .com Product Specification Silicon NP N Power Transistors CHARACTERISTICS Tj= 25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Co llector-emitter saturation voltage Base -emitter on voltage Collector cut-off current Emitter cut-off curren.
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