2SC3299 POWER TRANSISTOR Datasheet

2SC3299 Datasheet, PDF, Equivalent


Part Number

2SC3299

Description

SILICON POWER TRANSISTOR

Manufacture

SavantIC

Total Page 4 Pages
Datasheet
Download 2SC3299 Datasheet


2SC3299
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220Fa package
·Complement to type 2SA1307
·Low saturation voltage
·High speed switching time
APPLICATIONS
·High current switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Product Specification
2SC3299
Absolute maximum ratings (Tc=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
Ta=25
VALUE
60
50
5
5
1
20
2
150
-55~150
UNIT
V
V
V
A
A
W

2SC3299
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA , IB=0
VCEsat Collector-emitter saturation voltage IC=3A; IB=0.15A
VBEsat
Base-emitter saturation voltage
IC=3A; IB=0.15A
ICBO Collector cut-off current
VCB=50V ;IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=1V
hFE-2
DC current gain
IC=3A ; VCE=1V
Cob Output capacitance
IE=0 ; VCB=10V,f=1MHz
fT Transition frequency
IC=1A ; VCE=4V
Switching times
ton Turn-on time
ts Storage time
tf Fall time
IC=3A ;IB1=0.15A
IB2=-0.15A,VCC=30V
RL=10A
Product Specification
2SC3299
MIN TYP. MAX UNIT
50 V
0.4 V
1.2 V
1.0 µA
1.0 µA
70 240
30
80 pF
120 MHz
0.1 µs
1.0 µs
0.1 µs
hFE-1 Classifications
OY
70-140
120-240
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2SC3299 DESCRIPTION ·With TO-220Fa package ·Complement t o type 2SA1307 ·Low saturation voltage ·High speed switching time APPLICATIO NS ·High current switching application s PINNING PIN 1 2 3 DESCRIPTION Base Co llector Emitter Absolute maximum ratin gs (Tc=25 ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Colle ctor-emitter voltage Emitter-base volta ge Collector current Base current TC=25 PC Collector power dissipation Ta=25 T j Tstg Junction temperature Storage tem perature 2 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 60 50 5 5 1 20 W UNIT V V V A A Savant IC Semiconductor www.DataSheet4U.com P roduct Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unle ss otherwise specified PARAMETER Collec tor-emitter breakdown voltage Collector -emitter saturation voltage Base-emitte r saturation voltage Collector cut-off current Emitter cut-off curre.
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