2SC3300 POWER TRANSISTOR Datasheet

2SC3300 Datasheet, PDF, Equivalent


Part Number

2SC3300

Description

SILICON POWER TRANSISTOR

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2SC3300 Datasheet


2SC3300
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-3PN package
·Low saturation voltage
·Wide area of safe operation
APPLICATIONS
·Power and general purpose application
PINNING
PIN
DESCRIPTION
1 Base
2
Collector;connected to
mounting base
3 Emitter
Product Specification
2SC3300
Fig.1 simplified outline (TO-3PN) and symbol
ABSOLUTE MAXIMUM RATINGS (TC=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
Open emitter
Open base
Open collector
TC=25
VALUE
100
100
6
15
25
100
150
-55~150
UNIT
V
V
V
A
A
W

2SC3300
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCE(sat) Collector-emitter saturation voltage IC=10A ;IB=1A
VBE(sat) Base-emitter saturation voltage
IC=10A ;IB=1A
ICBO Collector cut-off current
VCB=100V; IE=0
IEBO Emitter cut-off current
VEB=6V; IC=0
hFE DC current gain
IC=5A ; VCE=4V
Product Specification
2SC3300
MIN TYP. MAX UNIT
100 V
100 V
6V
0.5 V
1.5 V
0.1 mA
0.1 mA
30 120
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2SC3300 DESCRIPTION ·With TO-3PN package ·Low saturation voltage ·Wide area of safe operation APPLICATIONS ·Power and general purpos e application PINNING PIN 1 2 3 Base Co llector;connected to mounting base Emit ter Fig.1 simplified outline (TO-3PN) a nd symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS (TC=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector- base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Collector p ower dissipation Junction temperature S torage temperature TC=25 CONDITIONS Ope n emitter Open base Open collector VALU E 100 100 6 15 25 100 150 -55~150 UNIT V V V A A W SavantIC Semiconductor www .DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACT ERISTICS Tj=25 unless otherwise specifi ed PARAMETER Collector-emitter breakdow n voltage Collector-base breakdown voltage Emitter-base breakdown v.
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