POWER TRANSISTOR. 2SC3306 Datasheet


2SC3306 TRANSISTOR. Datasheet pdf. Equivalent


Part Number

2SC3306

Description

SILICON POWER TRANSISTOR

Manufacture

SavantIC

Total Page 4 Pages
Datasheet
Download 2SC3306 Datasheet


2SC3306
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-3P(I) package
·Collector-emitter sustaining voltage-
VCEO(sus)=400V(Min)
·Fast switching times
APPLICATIONS
·Switching regulator and high voltage
switching applications
·High speed DC-DC converter applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Product Specification
2SC3306
Fig.1 simplified outline (TO-3P(I)) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current-DC
ICM Collector current-peak
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
500
400
7
10
15
5
100
150
-55~150
UNIT
V
V
V
A
A
A
W

2SC3306
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ,IB=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA ,IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ,IC=0
VCEsat
VBEsat
ICBO
IEBO
Collector-emitter saturation voltage IC=5A; IB=0.5A
Base-emitter saturation voltage
IC=5A; IB=0.5A
Collector cut-off current
VCB=400V; IE=0
Emitter cut-off current
VEB=7V; IC=0
hFE DC current gain
IC=5A ; VCE=5V
Switching times
tr Rise time
tstg Storage time
tf Fall time
VCC=200V; IC=5.0A
IB1=-IB2=0.5A;RL=40 <
Product Specification
2SC3306
MIN TYP. MAX UNIT
400 V
500 V
7V
1.5 V
2.0 V
100 µA
1.0 mA
10
1.0 µs
2.5 µs
1.0 µs
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO -3P(I) package ·Collector-emitter sust aining voltageVCEO(sus)=400V(Min) ·Fas t switching times APPLICATIONS ·Switch ing regulator and high voltage switchin g applications ·High speed DC-DC conve rter applications PINNING PIN 1 2 3 Bas e Collector;connected to mounting base Emitter DESCRIPTION 2SC3306 Fig.1 sim plified outline (TO-3P(I)) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PA RAMETER Collector-base voltage Collecto r-emitter voltage Emitter-base voltage Collector current-DC Collector current- peak Base current Collector power dissi pation Junction temperature Storage tem perature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 10 15 5 100 150 -55~150 UNIT V V V A A A W SavantIC Semiconductor www.DataS heet4U.com Product Specification Sili con NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise spe.
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