2SC3307 POWER TRANSISTOR Datasheet

2SC3307 Datasheet, PDF, Equivalent


Part Number

2SC3307

Description

SILICON POWER TRANSISTOR

Manufacture

SavantIC

Total Page 4 Pages
Datasheet
Download 2SC3307 Datasheet


2SC3307
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-3PL package
·Excellent switching times
: tr=1.0µs(Max .),tf=1.0µs(Max .)(IC=5A)
·High collector breakdown voltage : VCEO=800V
APPLICATIONS
·High speed,high voltage switching applications
·Switching regulator applications
·High speed DC-DC converter applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Product Specification
2SC3307
Fig.1 simplified outline (TO-3PL) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
ICM Collector current-peak
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
900
800
7
10
15
3
150
150
-55~150
UNIT
V
V
V
A
A
A
W

2SC3307
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
VCEsat Collector-emitter saturation voltage IC=5A ;IB=1A
VBEsat
Base-emitter saturation voltage
IC=5A ;IB=1A
ICBO Collector cut-off current
VCB=800V ;IE=0
IEBO Emitter cut-off current
VEB=7V; IC=0
hFE-1
DC current gain
IC=10mA ; VCE=5V
hFE-2
DC current gain
Switching times
IC=5A ; VCE=5V
tr Rise time
tstg Storage time
tf Fall time
IC=1A ; VCC?400V
IB1=-IB2=0.4A
Product Specification
2SC3307
MIN TYP. MAX UNIT
800 V
900 V
1.0 V
1.5 V
100 µA
1 mA
10
10
1.0 µs
3.0 µs
1.0 µs
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2SC3307 DESCRIPTION ·With TO-3PL package ·Excellent swit ching times : tr=1.0µs(Max .),tf=1.0µ s(Max .)(IC=5A) ·High collector breakd own voltage : VCEO=800V APPLICATIONS · High speed,high voltage switching appli cations ·Switching regulator applicati ons ·High speed DC-DC converter applic ations PINNING PIN 1 2 3 Base Collector ;connected to mounting base Emitter Fig .1 simplified outline (TO-3PL) and symb ol DESCRIPTION Absolute maximum rating s(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitt er-base voltage Collector current Colle ctor current-peak Base current Collecto r power dissipation Junction temperatur e Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector V ALUE 900 800 7 10 15 3 150 150 -55~150 UNIT V V V A A A W SavantIC Semiconduc tor www.DataSheet4U.com Product Specification Silicon NPN Power Trans.
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