2SC3309 POWER TRANSISTOR Datasheet

2SC3309 Datasheet, PDF, Equivalent


Part Number

2SC3309

Description

SILICON POWER TRANSISTOR

Manufacture

SavantIC

Total Page 4 Pages
Datasheet
Download 2SC3309 Datasheet


2SC3309
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220Fa package
·High collector breakdown voltage
·Excellent switching times
APPLICATIONS
·Switching regulators and high voltage
switching applications
·High speed DC-DC converter application
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Product Specification
2SC3309
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current (DC)
ICM Collector current-peak
IB Base current
PC Collector dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25
TC=25
VALUE
500
400
7
2
4
0.5
2.0
20
150
-50~150
UNIT
V
V
V
A
A
A
W

2SC3309
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0
V(BR)CBO Collector -base breakdown voltage IE=1mA; IE=0
VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2A
VBEsat
Base-emitter saturation voltage
IC=1A; IB=0.2A
ICBO Collector cut-off current
VCB=400V; IE=0
IEBO Emitter cut-off current
VEB=7V; IC=0
hFE-1
DC current gain
IC=0.1A ; VCE=5V
hFE-2
DC current gain
IC=1A ; VCE=5V
Switching times
tr Rise time
ts Storage time
tf Fall time
IB1=-IB2=0.08A
VCC<200V;RL=250>
PW=20µs
Product Specification
2SC3309
MIN TYP. MAX UNIT
400 V
500 V
1.0 V
1.5 V
100 µA
1 mA
20
8
1.0 µs
2.5 µs
1.0 µs
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2SC3309 DESCRIPTION ·With TO-220Fa package ·High collect or breakdown voltage ·Excellent switch ing times APPLICATIONS ·Switching regu lators and high voltage switching appli cations ·High speed DC-DC converter ap plication PINNING PIN 1 2 3 Base Collec tor Emitter Fig.1 simplified outline (T O-220Fa) and symbol DESCRIPTION Absolu te maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector -base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Base curre nt Ta=25 PC Collector dissipation TC=25 Tj Tstg Junction temperature Storage t emperature 20 150 -50~150 Open emitter Open base Open collector CONDITIONS VAL UE 500 400 7 2 4 0.5 2.0 W UNIT V V V A A A SavantIC Semiconductor www.DataSh eet4U.com Product Specification Silic on NPN Power Transistors CHARACTERISTIC S Tj=25 unless otherwise specified PARAMETER Collector-emitter break.
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