2SC3310 POWER TRANSISTOR Datasheet

2SC3310 Datasheet, PDF, Equivalent


Part Number

2SC3310

Description

SILICON POWER TRANSISTOR

Manufacture

SavantIC

Total Page 5 Pages
Datasheet
Download 2SC3310 Datasheet


2SC3310
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220Fa package
·High collector breakdown voltage
·Excellent Switching times
APPLICATIONS
·Switching regulator
·High speed DC-DC converter
·High voltage switching
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Product Specification
2SC3310
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current (DC)
ICM Collector current (pulse)
IB Base current (DC)
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25
TC=25
VALUE
500
400
7
5
7
1
2
30
150
-55~150
UNIT
V
V
V
A
A
A
W

2SC3310
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2SC3310
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=5A ;IB=1A
VBEsat
Base-emitter saturation voltage
IC=5A ;IB=1A
ICBO Collector cut-off current
VCB=400V; IE=0
IEBO Emitter cut-off current
VEB=7V; IC=0
hFE-1
DC current gain
IC=3A ; VCE=5V
hFE-2
DC current gain
IC=5A ; VCE=5V
Switching times
Tr Rise time
ts Storage time
tf Fall time
IC=4A ;IB1=-IB2=0.4A
VCC<200V;RL=10>
MIN TYP. MAX UNIT
500 V
400 V
1.0 V
1.5 V
100 µA
1 mA
12
8
1.0 µs
2.5 µs
1.0 µs
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2SC3310 DESCRIPTION ·With TO-220Fa package ·High collect or breakdown voltage ·Excellent Switch ing times APPLICATIONS ·Switching regu lator ·High speed DC-DC converter ·Hi gh voltage switching PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Abs olute maximum ratings(Ta=25 ) SYMBOL VC BO VCEO VEBO IC ICM IB PARAMETER Collec tor-base voltage Collector-emitter volt age Emitter-base voltage Collector curr ent (DC) Collector current (pulse) Base current (DC) Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temp erature Storage temperature 30 150 -55~ 150 CONDITIONS Open emitter Open base O pen collector VALUE 500 400 7 5 7 1 2 W UNIT V V V A A A SavantIC Semiconduct or www.DataSheet4U.com Product Specifi cation Silicon NPN Power Transistors 2SC3310 CHARACTERISTICS Tj=25 unless o therwise specified PARAMETER Collector- base breakdown voltage Collector-emitter breakdown voltage Collector-.
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