2SC3317 POWER TRANSISTOR Datasheet

2SC3317 Datasheet, PDF, Equivalent


Part Number

2SC3317

Description

SILICON POWER TRANSISTOR

Manufacture

SavantIC

Total Page 4 Pages
Datasheet
Download 2SC3317 Datasheet


2SC3317
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220C package
·High voltage,high speed switching
·High reliability
APPLICATIONS
·Switching regulators
·Ultrasonic generators
·High frequency inverters
·General purpose power amplifiers
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Product Specification
2SC3317
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction to case
VALUE
500
400
7
5
2
40
150
-65~150
UNIT
V
V
V
A
A
W
MAX
3.13
UNIT
/W

2SC3317
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ; IB=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA ; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ; IB=0
VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A
VBEsat
Base-emitter saturation voltage
IC=2A; IB=0.4A
ICBO Collector cut-off current
VCB=500V ;IE=0
IEBO Emitter cut-off current
hFE DC current gain
Switching times
VEB=7V; IC=0
IC=2A ; VCE=5V
ton Turn-on time
tstg Storage time
tf Fall time
IC=2.5AIB1=0.5A;
IB2=-1A;RL=60A
Pw=20µs ;DutyB2%
Product Specification
2SC3317
MIN TYP. MAX UNIT
400 V
400
500 V
7V
1.0 V
1.5 V
1 mA
1 mA
10
0.50 µs
1.50 µs
0.15 µs
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO -220C package ·High voltage,high speed switching ·High reliability APPLICATI ONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers PINN ING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2 SC3317 Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tst g PARAMETER Collector-base voltage Coll ector-emitter voltage Emitter-base volt age Collector current Base current Coll ector dissipation Junction temperature Storage temperature TC=25 CONDITIONS Op en emitter Open base Open collector VAL UE 500 400 7 5 2 40 150 -65~150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMB OL Rth j-C PARAMETER Thermal resistance junction to case MAX 3.13 UNIT /W Sav antIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Po wer Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAM.
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