2SC3322 POWER TRANSISTOR Datasheet

2SC3322 Datasheet, PDF, Equivalent


Part Number

2SC3322

Description

SILICON POWER TRANSISTOR

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2SC3322 Datasheet


2SC3322
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-3P(I) package
·High voltage
·High speed
APPLICATIONS
·High power switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Product Specification
2SC3322
Fig.1 simplified outline (TO-3P(I)) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
IB Base current
PT Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
900
800
7
5
10
2.5
80
150
-55~150
UNIT
V
V
V
A
A
A
W

2SC3322
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2SC3322
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ,L=100mH;RBE=:
V(BR)EBO Base-emitter breakdown voltage
IE=10mA; IC=0
VCEsat Collector-emitter saturation voltage IC=1.5A; IB=0.3A
VBE sat Base-emitter saturation voltage
IC=1.5A; IB=0.3A
ICBO Collector cut-off current
VCB=750V; IE=0
ICEO Collector cut-off current
VCE=650V; RBE=:
hFE-1
DC current gain
IC=0.5A ; VCE=5V
hFE-2
DC current gain
IC=3A ; VCE=5V
Switching times
800
7
15
7
V
V
1.0 V
1.5 V
100 µA
100 µA
ton Turn-on time
tstg Storage time
tf Fall time
IC=3A ; VCC@250V
IB1=0.6A; IB2=-1.5A
1.0 µs
3.0 µs
1.0 µs
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2SC3322 DESCRIPTION ·With TO-3P(I) package ·High voltage ·High speed APPLICATIONS ·High power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(I)) and symbol DESCRIPTION Abso lute maximum ratings(Ta=25 ) SYMBOL VCB O VCEO VEBO IC ICM IB PT Tj Tstg PARAME TER Collector-base voltage Collector-em itter voltage Emitter-base voltage Coll ector current Collector current-peak Ba se current Total power dissipation Junc tion temperature Storage temperature TC =25 CONDITIONS Open emitter Open base O pen collector VALUE 900 800 7 5 10 2.5 80 150 -55~150 UNIT V V V A A A W Sava ntIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Pow er Transistors CHARACTERISTICS Tj=25 un less otherwise specified PARAMETER Coll ector-emitter sustaining voltage Base-e mitter breakdown voltage Collector-emitter saturation voltage Base-.
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