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BTA06

Inchange Semiconductor

Triacs

isc Triacs BTA06T/D/S/A FEATURES ·With TO-220AB insulated package ·Suitables for general purpose applications where ga...


Inchange Semiconductor

BTA06

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Description
isc Triacs BTA06T/D/S/A FEATURES ·With TO-220AB insulated package ·Suitables for general purpose applications where gate high sensitivity is required. Application on 4Q such as phase control and static switching. ·Minimum Lot-to-Lot variations for robust device performance and reliable Operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER IT(RMS) RMS on-state current (full sine wave)Tj=85℃ ITSM Non-repetitive peak on-state current tp=10ms Tj Operating junction temperature Tstg Storage temperature Rth(j-c) Thermal resistance, junction to case Rth(j-a) Thermal resistance, junction to ambient MIN UNIT 6 A 60 A 110 ℃ -45~150 ℃ 4.4 ℃/W 60 ℃/W SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage 400T/D/S/A 600T/D/S/A 700T/D/S/A UNIT 400 600 700 V 400 600 700 V ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VR=VRRM, VR=VRRM, Tj=110℃ IDRM Repetitive peak off-state current VD=VDRM, VD=VDRM, Tj=110℃ T Ⅰ-Ⅱ-Ⅲ IGT Gate trigger current VD=12V; RL= 33Ω 5 Ⅳ 5 IH Holding current IGT= 0.1A, Gate Open 15 VGT Gate trigger voltage all quadrant VD=12V; RL= 30Ω VTM On-state voltage IT= 8.5A MAX 0.01 0.75 0.01 0.75 DS 5 10 10 10 15 25 1.5 1.65 UNIT mA mA A 10 mA 25 25 mA V V isc website:www.iscsemi.com isc & iscsemi is registered trademark NOTICE: ISC reserves the rights to make changes of the content herein t...




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