SPP80N03L

www.DataSheet4U.com Preliminary data SPP80N03L SPB80N03L SIPMOS ® Power Transistor N-Channel Enhancement mode Avalanche rated Logic Level dv/dt rated 175°C operating temperature Type SPP80N03L SPB80N03L Pin 1 G Pin 2 D Pin 3 S VDS 30 V ID 80 A RDS(on) 0.008 Ω 0.006 Ω @ VGS Package P-TO220-3-1 P-TO263-3-2 Ordering Code Q67040-S4735-A2 Q67040-S4735-A3 VGS = 4.5 V VGS = 10 V Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current Symbol Value 80 Unit A 80 320 700 80 30 6 mJ A mJ kV/µs ID TC = 25 °C, TC = 100 °C 1) Pulsed drain current ID puls EAS IAR EAR dv/dt TC = 25 °C Avalanche energy, single pulse ID = 80 A, VDD = 25 V, RGS = 25 Ω Avalanche current,periodic limited by Tjmax Avalanche energy,periodic limited by Tj(max) Reverse diode dv/dt IS = 80 A, VDS = 24 V, di/dt = 200 A/µs, Tjmax = 175 °C Gate source voltage Gate source peak voltage, aperiodic Power dissipation, TC = 25 °C Operating temperature Storage temperature IEC climatic category; DIN IEC 68-1 1current VGS Vgs Ptot Tj Tstg ±14 ±20 300 -55 ... +175 -55 ... +175 55/175/56 V V W °C limited by bond wire 1 05 / 1998 Semiconductor Group www.DataSheet4U.com Preliminary data SPP80N03L SPB80N03L Electrical Characteristics Parameter at Tj = 25 °C, unless otherwise specified Thermal Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area1) Symbol...