SPP80N03S2-03

www.DataSheet4U.com SPI80N03S2-03 SPP80N03S2-03,SPB80N03S2-03 OptiMOS® Power-Transistor Feature N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 30 3.1 80 P- TO220 -3-1 V mΩ A Enhancement mode Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance P- TO262 -3-1 175°C operating temperature Avalanche rated dv/dt rated Type SPP80N03S2-03 SPB80N03S2-03 SPI80N03S2-03 Package P- TO220 -3-1 P- TO263 -3-2 P- TO262 -3-1 Ordering Code Q67040-S4247 Q67040-S4258 Q67042-S4079 Marking 2N0303 2N0303 2N0303 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) TC=25°C Value 80 80 320 810 30 6 ±20 300 -55... +175 55/175/56 Unit A ID Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg Avalanche energy, single pulse ID=80 A , V DD=25V, RGS=25Ω mJ Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=80A, VDS=24V, di/dt=200A/µs, T jmax=175°C kV/µs V W °C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-05-09 www.DataSheet4U.com SPI80N03S2-03 SPP80N03S2-03,SPB80N03S2-03 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Symbol min. RthJC RthJA RthJA - Values typ. 0.3 max. 0.5 62 62 40 Unit K/W Elec...