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SPI80N03S2-03 SPP80N03S2-03,SPB80N03S2-03
OptiMOS® Power-Transistor
Feature
• N-Channel
Product S...
www.DataSheet4U.com
SPI80N03S2-03 SPP80N03S2-03,SPB80N03S2-03
OptiMOS® Power-
Transistor
Feature
N-Channel
Product Summary VDS RDS(on) max. SMD version ID
P- TO263 -3-2
30 3.1 80
P- TO220 -3-1
V mΩ A
Enhancement mode Excellent Gate Charge x RDS(on) product (FOM)
Superior thermal resistance
P- TO262 -3-1
175°C operating temperature Avalanche rated dv/dt rated
Type SPP80N03S2-03 SPB80N03S2-03 SPI80N03S2-03
Package P- TO220 -3-1 P- TO263 -3-2 P- TO262 -3-1
Ordering Code Q67040-S4247 Q67040-S4258 Q67042-S4079
Marking 2N0303 2N0303 2N0303
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1)
TC=25°C
Value 80 80 320 810 30 6 ±20 300 -55... +175 55/175/56
Unit A
ID
Pulsed drain current
TC=25°C
ID puls EAS EAR dv/dt VGS Ptot T j , Tstg
Avalanche energy, single pulse
ID=80 A , V DD=25V, RGS=25Ω
mJ
Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt
IS=80A, VDS=24V, di/dt=200A/µs, T jmax=175°C
kV/µs V W °C
Gate source voltage Power dissipation
TC=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Page 1
2003-05-09
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SPI80N03S2-03 SPP80N03S2-03,SPB80N03S2-03
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area
3)
Symbol min. RthJC RthJA RthJA -
Values typ. 0.3 max. 0.5 62 62 40
Unit
K/W
Elec...