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SPB80N04S2-04 Dataheets PDF



Part Number SPB80N04S2-04
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Power-Transistor
Datasheet SPB80N04S2-04 DatasheetSPB80N04S2-04 Datasheet (PDF)

www.DataSheet4U.com SPI80N04S2-04 SPP80N04S2-04,SPB80N04S2-04 OptiMOS Power-Transistor Feature • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO262 -3-1 P- TO263 -3-2 40 3.4 80 P- TO220 -3-1 V mΩ A • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated Type SPP80N04S2-04 SPB80N04S2-04 SPI80N04S2-04 Package Ordering Code Marking 2N0404 2N0404 2N0404 Value 80 80 Unit A P- TO220 -3-1 Q67040-S4260 P- TO263 -3-2 Q67040-S4257 P- TO262 -3-1 Q67060-S.

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www.DataSheet4U.com SPI80N04S2-04 SPP80N04S2-04,SPB80N04S2-04 OptiMOS Power-Transistor Feature • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO262 -3-1 P- TO263 -3-2 40 3.4 80 P- TO220 -3-1 V mΩ A • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated Type SPP80N04S2-04 SPB80N04S2-04 SPI80N04S2-04 Package Ordering Code Marking 2N0404 2N0404 2N0404 Value 80 80 Unit A P- TO220 -3-1 Q67040-S4260 P- TO263 -3-2 Q67040-S4257 P- TO262 -3-1 Q67060-S6173 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Symbol Parameter Continuous drain current 1) TC=25°C TC=100°C ID Pulsed drain current TC=25°C I D puls EAS EAR dv/dt VGS Ptot T j , T stg 320 810 30 6 ±20 300 -55... +175 55/175/56 kV/µs V W °C mJ Avalanche energy, single pulse ID=80A, VDD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax2) Reverse diode dv/dt IS=80A, VDS=32V, di/dt=200A/µs, Tjmax =175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2004-05-24 www.DataSheet4U.com SPI80N04S2-04 SPP80N04S2-04,SPB80N04S2-04 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Symbol min. RthJC RthJA RthJA Values typ. 0.3 max. 0.5 62 62 40 Unit - K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, I D=1mA Symbol min. V(BR)DSS VGS(th) I DSS Values typ. 3 max. 4 Unit 40 2.1 V Gate threshold voltage, VGS = VDS ID=250µA Zero gate voltage drain current V DS=40V, V GS=0V, Tj=25°C V DS=40V, V GS=0V, Tj=125°C2) µA 0.01 1 1 1 100 100 nA mΩ 3 2.7 3.7 3.4 Gate-source leakage current V GS=20V, VDS=0V I GSS RDS(on) - Drain-source on-state resistance 4) V GS=10V, ID=80A V GS=10V, ID=80A, SMD version 1Current limited by bondwire ; with an R thJC = 0.5K/W the chip is able to carry I D= 208A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4Diagrams are related to straight lead versions Page 2 2004-05-24 www.DataSheet4U.com SPI80N04S2-04 SPP80N04S2-04,SPB80N04S2-04 Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Symbol Conditions min. Values typ. 125 5250 1870 420 16 45 50 40 max. - Unit gfs Ciss Coss Crss td(on) tr td(off) tf V DS≥2*ID*R DS(on)max, ID=80A V GS=0V, VDS=25V, f=1MHz 60 - S 6980 pF 2490 630 24 68 75 60 ns V DD=20V, V GS=10V, ID=80A, RG=2.2Ω Qgs Qgd Qg VDD =32V, ID=80A - 25 50 135 5.3 35 75 170 - nC VDD =32V, ID=80A, VGS =0 to 10V V(plateau) VDD = 32 V , ID=80A V Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge ISM VSD trr Qrr VGS =0V, IF=80A VR =20V, IF=lS , diF/dt=100A/µs IS TC=25°C - 0.9 60 100 80 320 1.3 75 125 A V ns nC Page 3 2004-05-24 www.DataSheet4U.com SPI80N04S2-04 SPP80N04S2-04,SPB80N04S2-04 2 Drain current ID = f (TC) parameter: V GS≥ 10 V 90 SPP80N04S2-04 1 Power dissipation Ptot = f (TC) parameter: V GS≥ 6 V 320 SPP80N04S2-04 W A 240 70 60 Ptot ID 50 40 30 20 10 0 0 100 120 140 160 °C 190 200 160 120 80 40 0 0 20 40 60 80 20 40 60 80 100 120 140 160 °C 190 TC TC 3 Safe operating area ID = f ( V DS ) parameter : D = 0 , TC = 25 °C 10 3 SPP80N04S2-04 4 Max. transient thermal impedance ZthJC = f (t p) parameter : D = t p/T K/W 10 1 SPP80N04S2-04 DS /I D A V tp = 59.0µs 100 µs 10 0 ZthJC 1 ms ID R 10 2 DS (o n) = 10 -1 10 -2 D = 0.50 0.20 0.10 0.05 0.02 10 1 10 -3 10 -4 single pulse 0.01 10 0 -1 10 10 0 10 1 V 10 2 10 -5 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Page 4 tp 2004-05-24 www.DataSheet4U.com SPI80N04S2-04 SPP80N04S2-04,SPB80N04S2-04 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: V GS 13 SPP80N04S2-04 5 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 80 µs 190 SPP80N04S2-04 A 160 140 Ptot = 300W g f VGS [V] a 4.5 b 5.0 5.3 5.5 5.7 6.0 10.0 mΩ 11 10 b c d e c d RDS(on) e 9 8 7 6 5 4 f ID 120 d e f g 100 80 60 40 20 a b c 3 2 1 VGS [V] = b 5.0 c 5.3 d 5.5 e f 5.7 6.0 g 10.0 g 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 0 0 20 40 60 80 100 120 A 160 VDS ID 7 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 80 µs 320 8 Ty.


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