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SPI80N04S2-04 SPP80N04S2-04,SPB80N04S2-04
OptiMOS Power-Transistor
Feature
• N-Channel
Product Summary VDS RDS(on) max. SMD version ID
P- TO262 -3-1 P- TO263 -3-2
40 3.4 80
P- TO220 -3-1
V mΩ A
• Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated
Type SPP80N04S2-04 SPB80N04S2-04 SPI80N04S2-04
Package
Ordering Code
Marking 2N0404 2N0404 2N0404 Value 80 80 Unit A
P- TO220 -3-1 Q67040-S4260 P- TO263 -3-2 Q67040-S4257 P- TO262 -3-1 Q67060-S6173
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Symbol Parameter Continuous drain current 1)
TC=25°C TC=100°C
ID
Pulsed drain current
TC=25°C
I D puls EAS EAR dv/dt VGS Ptot T j , T stg
320 810 30 6 ±20 300 -55... +175 55/175/56 kV/µs V W °C mJ
Avalanche energy, single pulse
ID=80A, VDD=25V, RGS=25Ω
Repetitive avalanche energy, limited by Tjmax2)
Reverse diode dv/dt
IS=80A, VDS=32V, di/dt=200A/µs, Tjmax =175°C
Gate source voltage Power dissipation
TC=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
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2004-05-24
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SPI80N04S2-04 SPP80N04S2-04,SPB80N04S2-04
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area 3)
Symbol min.
RthJC RthJA RthJA
Values typ. 0.3 max. 0.5 62 62 40
Unit
-
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage
V GS=0V, I D=1mA
Symbol min.
V(BR)DSS VGS(th) I DSS
Values typ. 3 max. 4
Unit
40 2.1
V
Gate threshold voltage, VGS = VDS
ID=250µA
Zero gate voltage drain current
V DS=40V, V GS=0V, Tj=25°C V DS=40V, V GS=0V, Tj=125°C2)
µA 0.01 1 1 1 100 100 nA mΩ 3 2.7 3.7 3.4
Gate-source leakage current
V GS=20V, VDS=0V
I GSS RDS(on)
-
Drain-source on-state resistance 4)
V GS=10V, ID=80A V GS=10V, ID=80A, SMD version
1Current limited by bondwire ; with an R thJC = 0.5K/W the chip is able to carry I D= 208A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4Diagrams are related to straight lead versions Page 2
2004-05-24
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SPI80N04S2-04 SPP80N04S2-04,SPB80N04S2-04
Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage
Symbol
Conditions min.
Values typ. 125 5250 1870 420 16 45 50 40 max. -
Unit
gfs Ciss Coss Crss td(on) tr td(off) tf
V DS≥2*ID*R DS(on)max, ID=80A V GS=0V, VDS=25V, f=1MHz
60 -
S
6980 pF 2490 630 24 68 75 60 ns
V DD=20V, V GS=10V, ID=80A, RG=2.2Ω
Qgs Qgd Qg
VDD =32V, ID=80A
-
25 50 135 5.3
35 75 170 -
nC
VDD =32V, ID=80A, VGS =0 to 10V
V(plateau) VDD = 32 V , ID=80A
V
Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge ISM VSD trr Qrr
VGS =0V, IF=80A VR =20V, IF=lS , diF/dt=100A/µs
IS
TC=25°C
-
0.9 60 100
80 320 1.3 75 125
A
V ns nC
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2004-05-24
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SPI80N04S2-04 SPP80N04S2-04,SPB80N04S2-04 2 Drain current ID = f (TC) parameter: V GS≥ 10 V
90
SPP80N04S2-04
1 Power dissipation Ptot = f (TC) parameter: V GS≥ 6 V
320
SPP80N04S2-04
W
A
240
70 60
Ptot
ID
50 40 30 20 10 0 0 100 120 140 160 °C 190
200
160
120
80
40
0 0
20
40
60
80
20
40
60
80
100 120 140 160 °C 190
TC
TC
3 Safe operating area ID = f ( V DS ) parameter : D = 0 , TC = 25 °C
10
3 SPP80N04S2-04
4 Max. transient thermal impedance ZthJC = f (t p) parameter : D = t p/T
K/W
10 1
SPP80N04S2-04
DS
/I
D
A
V
tp = 59.0µs 100 µs
10 0
ZthJC
1 ms
ID
R
10 2
DS (o
n)
=
10 -1
10 -2
D = 0.50 0.20 0.10 0.05 0.02
10
1
10
-3
10 -4
single pulse
0.01
10 0 -1 10
10
0
10
1
V
10
2
10 -5 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
VDS
Page 4
tp
2004-05-24
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SPI80N04S2-04 SPP80N04S2-04,SPB80N04S2-04 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: V GS
13
SPP80N04S2-04
5 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 80 µs
190
SPP80N04S2-04
A
160 140
Ptot = 300W
g f
VGS [V] a 4.5 b 5.0 5.3 5.5 5.7 6.0 10.0
mΩ
11 10
b c d e
c d
RDS(on)
e
9 8 7 6 5 4
f
ID
120
d
e f g
100 80 60 40 20
a b c
3 2 1
VGS [V] =
b 5.0 c 5.3 d 5.5 e f 5.7 6.0 g 10.0
g
0 0
0.5
1
1.5
2
2.5
3
3.5
4
V
5
0 0
20
40
60
80
100
120
A
160
VDS
ID
7 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 80 µs
320
8 Ty.