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Preliminary data
SPI80N10L SPP80N10L,SPB80N10L
SIPMOS Power-Transistor
Feature
Product Summary VDS RDS(on) ID
P-TO262-3-1 P-TO263-3-2
N-Channel Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated
100 14 80
P-TO220-3-1
V m A
Type SPP80N10L SPB80N10L SPI80N10L
Package P-TO220-3-1 P-TO263-3-2 P-TO262-3-1
Ordering Code Q67042-S4173 Q67042-S4171 Q67042-S4172
Marking 80N10L 80N10L 80N10L
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current
TC=25°C TC=100°C
Symbol ID
Value 80 58
Unit A
Pulsed drain current
TC=25°C
ID puls EAS EAR dv/dt VGS Ptot Tj , Tstg
320 700 25 6 ±20 250 -55... +175 55/175/56 kV/µs V W °C mJ
Avalanche energy, single pulse
ID =80 A , VDD =25V, RGS =25
Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt
IS =80A, VDS =0V, di/dt=200A/µs
Gate source voltage Power dissipation
TC=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Page 1
2002-08-14
www.DataSheet4U.com
Preliminary data
SPI80N10L SPP80N10L,SPB80N10L
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm 2 cooling area
1)
Symbol min. RthJC RthJA RthJA -
Values typ. max. 0.6 62.5 62 40
Unit
K/W
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage
VGS =0V, ID =2mA
Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 100 1.2
Values typ. 1.6 max. 2
Unit
V
Gate threshold voltage, VGS = VDS
ID = 2 mA
Zero gate voltage drain current
VDS =100V, VGS =0V, Tj =25°C VDS =100V, VGS =0V, Tj =150°C
µA 0.1 10 15 11 1 100 100 24 14 nA m
Gate-source leakage current
VGS =20V, VDS=0V
Drain-source on-state resistance
VGS =4.5V, ID=58A
Drain-source on-state resistance
VGS =10V, ID =58A
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2
2002-08-14
www.DataSheet4U.com
Preliminary data
SPI80N10L SPP80N10L,SPB80N10L
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time gfs Ciss Coss Crss td(on) tr td(off) tf
VDD =50V, VGS=10V, ID =80A, RG =1.6 VDS 2*ID *RDS(on)max , ID =58A VGS =0V, VDS =25V, f=1MHz
Symbol
Conditions min. 26 -
Values typ. 52 3630 640 345 14 60 82 20 max. 4540 800 430 21 90 123 30
Unit
S pF
ns
Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr
VGS =0V, I.