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BTN2222A3 Dataheets PDF



Part Number BTN2222A3
Manufacturers Cystech Electonics
Logo Cystech Electonics
Description General Purpose NPN Epitaxial Planar Transistor
Datasheet BTN2222A3 DatasheetBTN2222A3 Datasheet (PDF)

CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTN2222A3 Spec. No. : C227A3 Issued Date : 2003.03.26 Revised Date : 2014.04.25 Page No. : 1/8 Description • Low collector output capacitance. • High current capability • Low leakage current • High cutoff frequency • Pb-free lead plating and halogen-free package Symbol BTN2222A3 Outline TO-92 B:Base C:Collector E:Emitter EE CB BC Ordering Information Device BTN2222A3-X-TB-G BTN2222A3-X-BK-G Package TO-92 (Pb-free .

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CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTN2222A3 Spec. No. : C227A3 Issued Date : 2003.03.26 Revised Date : 2014.04.25 Page No. : 1/8 Description • Low collector output capacitance. • High current capability • Low leakage current • High cutoff frequency • Pb-free lead plating and halogen-free package Symbol BTN2222A3 Outline TO-92 B:Base C:Collector E:Emitter EE CB BC Ordering Information Device BTN2222A3-X-TB-G BTN2222A3-X-BK-G Package TO-92 (Pb-free lead plating and halogen-free package) TO-92 (Pb-free lead plating and halogen-free package) Shipping 2000 pcs / Tape & Box 1000 pcs/ bag, 10 bags/box, 10boxes/carton BTN2222A3 Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, TB :2000 pcs/tape & box; BK: 1000 pcs / bag, 10 bags/box, 10 boxes/carton Product rank, zero for no rank products Product name CYStek Product Specification CYStech Electronics Corp. Spec. No. : C227A3 Issued Date : 2003.03.26 Revised Date : 2014.04.25 Page No. : 2/8 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation @Ta=25℃ Derate above 25℃ Operating Junction and Storage Temperature Range Symbol VCBO VCEO VEBO IC Pd Tj ; Tstg Limits 75 50 6 600 625 150 Unit V V V mA mW °C Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO ICEX IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 hFE1 hFE2 hFE3 *hFE4 *hFE5 *hFE6 fT Cob Min. 75 50 6 35 50 75 100 50 40 - Typ. 0.2 230 8.3 Classification Of hFE4 Rank A Range 100~180 Max. 10 10 100 0.3 0.5 1.0 1.2 300 - Unit V V V nA nA nA V V V V MHz pF Test Conditions IC=10 μA IC=10 mA IE=10 μA VCB=60V VCE=60V, VEB(off)=3V VEB=3V IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V, IC=0.1mA VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=150mA VCE=1V, IC=150mA VCE=10V, IC=500mA VCE=5V, IC=20mA, f=100MHz VCB=10V, IE=0A,f=1MHz *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2% N 120~270 B 180~300 BTN2222A3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C227A3 Issued Date : 2003.03.26 Revised Date : 2014.04.25 Page No. : 3/8 Typical Characteristics Emitter Grounded Output Characteristics 0.25 Collector Current---IC(A) 0.2 1mA 0.15 0.1 0.05 0 0 500uA 400uA 300uA 200uA IB=100uA 1 2 34 5 Collector-to-Emitter Voltage---VCE(V) 6 Collector Current---IC(A) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 Emitter Grounded Output Characteristics 5mA 2.5mA 2mA 1.5mA 1mA IB=500uA 12345 Collector-to-Emitter Voltage---VCE(V) 6 Current Gain vs Collector Current 1000 Ta=125°C Current Gain vs Collector Current 1000 Ta=125°C Current Gain---HFE Current Gain---HFE 100 Ta=25°C Ta=75°C 10 1 1000 VCE=1V 10 100 Collector Current---IC(mA) Current Gain vs Collector Current Ta=125°C 100 Ta=25°C Ta=75°C 1000 VCE=2V 10 1 10 100 Collector Current---IC(mA) 1000 Saturation Voltage vs Collector Current 1000 VCESAT=10IB Saturation Voltage---(mV) Current Gain---HFE 100 Ta=25°C Ta=75°C VCE=10V 10 1 10 100 Collector Current---IC(mA) 100 10 1000 1 125°C 75°C 25°C 10 100 Collector Current---IC(mA) 1000 BTN2222A3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C227A3 Issued Date : 2003.03.26 Revised Date : 2014.04.25 Page No. : 4/8 Typical Characteristics(Cont.) Saturation Voltage vs Collector Current 1000 VCESAT=20IB Saturation Voltage vs Collector Current 1000 VCESAT=38IB Saturation Voltage---(mV) Saturation Voltage---(mV) Saturation Voltage---(mV) 100 100 125°C 75°C 25°C 125°C 75°C 25°C 10 1 10 100 Collector Current---IC(mA) 10 1000 1 10 100 Collector Current---IC(mA) 10000 Saturation Voltage vs Collector Current VBESAT@IC=10IB 10000 On Voltage vs Collector Current VBEON@VCE=10V 1000 1000 Ta=75°C Ta=25°C 1000 75°C 25°C On Voltage---(mV) 100 1 100 125°C 10 100 Collector Current---IC(mA) Capacitance vs Reverse-biased Voltage 1000 Cib 100 1 125°C 10 100 Collector Current---IC(mA) 1000 Transition Frequency vs Collector Current 1000 VCE=5V 10 100 Cob Transition Frequency---fT(MHz) Capacitance---(pF) 1 0.1 1 10 Reverse-biased Voltage---VR(V) BTN2222A3 100 10 1 10 100 Collector Current---IC(mA) 1000 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C227A3 Issued Date : 2003.03.26 Revised Date : 2014.04.25 Page No. : 5/8 Typical Characteristics(Cont.) Power Dissipation---PD(mW) Forward Current---IC(A) 700 600 500 400 300 200 100 0 0 Power Derating Curve 50 100 150 Ambient Temperature---TA(℃) 200 10 1 0.1 0.01 1 Safe Operating Area 1ms 100ms 1s DC 10 Forward Voltage---VCE(V) 100 BTN2222A3 CYStek Product Specification CYStech Electronics Corp. TO-92 Taping Outline Spec. No. : C227A3 Issued Date : 2003.03.26 Revised Date : 2014.04.25 Page No. : 6/8 H2 H2 H2AH2A D2 A H3 L L1 F1F2 T2 P1 TP T1 H4 .


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