Document
CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
BTN2222A3
Spec. No. : C227A3 Issued Date : 2003.03.26 Revised Date : 2014.04.25 Page No. : 1/8
Description
• Low collector output capacitance. • High current capability • Low leakage current • High cutoff frequency • Pb-free lead plating and halogen-free package
Symbol
BTN2222A3
Outline
TO-92
B:Base C:Collector E:Emitter
EE CB BC
Ordering Information
Device BTN2222A3-X-TB-G BTN2222A3-X-BK-G
Package
TO-92 (Pb-free lead plating and halogen-free package)
TO-92 (Pb-free lead plating and halogen-free package)
Shipping
2000 pcs / Tape & Box
1000 pcs/ bag, 10 bags/box, 10boxes/carton
BTN2222A3
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, TB :2000 pcs/tape & box; BK: 1000 pcs / bag, 10 bags/box, 10 boxes/carton
Product rank, zero for no rank products Product name
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C227A3 Issued Date : 2003.03.26 Revised Date : 2014.04.25 Page No. : 2/8
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation @Ta=25℃ Derate above 25℃ Operating Junction and Storage Temperature Range
Symbol
VCBO VCEO VEBO
IC
Pd
Tj ; Tstg
Limits
75
50 6 600
625
150
Unit
V
V V mA
mW
°C
Characteristics (Ta=25°C)
Symbol
BVCBO BVCEO BVEBO
ICBO ICEX IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 hFE1 hFE2 hFE3 *hFE4 *hFE5 *hFE6 fT Cob
Min.
75 50 6 35 50 75 100 50 40 -
Typ.
0.2 230 8.3
Classification Of hFE4
Rank
A
Range
100~180
Max.
10 10 100 0.3 0.5 1.0 1.2 300 -
Unit
V V V nA nA nA V V V V MHz pF
Test Conditions
IC=10 μA IC=10 mA IE=10 μA VCB=60V VCE=60V, VEB(off)=3V VEB=3V IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V, IC=0.1mA VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=150mA VCE=1V, IC=150mA VCE=10V, IC=500mA VCE=5V, IC=20mA, f=100MHz VCB=10V, IE=0A,f=1MHz
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
N 120~270
B 180~300
BTN2222A3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C227A3 Issued Date : 2003.03.26 Revised Date : 2014.04.25 Page No. : 3/8
Typical Characteristics
Emitter Grounded Output Characteristics 0.25
Collector Current---IC(A)
0.2 1mA
0.15
0.1
0.05
0 0
500uA 400uA 300uA
200uA IB=100uA
1 2 34 5 Collector-to-Emitter Voltage---VCE(V)
6
Collector Current---IC(A)
0.7 0.6 0.5 0.4 0.3 0.2 0.1
0 0
Emitter Grounded Output Characteristics
5mA
2.5mA 2mA
1.5mA
1mA IB=500uA
12345 Collector-to-Emitter Voltage---VCE(V)
6
Current Gain vs Collector Current 1000
Ta=125°C
Current Gain vs Collector Current 1000
Ta=125°C
Current Gain---HFE
Current Gain---HFE
100
Ta=25°C
Ta=75°C
10 1
1000
VCE=1V
10 100 Collector Current---IC(mA) Current Gain vs Collector Current
Ta=125°C
100 Ta=25°C Ta=75°C
1000
VCE=2V
10 1
10 100 Collector Current---IC(mA)
1000
Saturation Voltage vs Collector Current 1000
VCESAT=10IB
Saturation Voltage---(mV)
Current Gain---HFE
100
Ta=25°C
Ta=75°C
VCE=10V
10 1
10 100 Collector Current---IC(mA)
100
10 1000 1
125°C 75°C 25°C
10 100 Collector Current---IC(mA)
1000
BTN2222A3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C227A3 Issued Date : 2003.03.26 Revised Date : 2014.04.25 Page No. : 4/8
Typical Characteristics(Cont.)
Saturation Voltage vs Collector Current 1000
VCESAT=20IB
Saturation Voltage vs Collector Current 1000
VCESAT=38IB
Saturation Voltage---(mV)
Saturation Voltage---(mV)
Saturation Voltage---(mV)
100 100 125°C 75°C 25°C
125°C 75°C 25°C
10 1
10 100 Collector Current---IC(mA)
10 1000 1
10 100 Collector Current---IC(mA)
10000
Saturation Voltage vs Collector Current
VBESAT@IC=10IB
10000
On Voltage vs Collector Current
VBEON@VCE=10V
1000
1000
Ta=75°C
Ta=25°C
1000
75°C 25°C
On Voltage---(mV)
100 1
100
125°C
10 100 Collector Current---IC(mA)
Capacitance vs Reverse-biased Voltage
1000
Cib
100 1
125°C
10 100 Collector Current---IC(mA)
1000
Transition Frequency vs Collector Current 1000
VCE=5V
10 100 Cob
Transition Frequency---fT(MHz)
Capacitance---(pF)
1 0.1
1 10 Reverse-biased Voltage---VR(V)
BTN2222A3
100
10 1
10 100 Collector Current---IC(mA)
1000
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C227A3 Issued Date : 2003.03.26 Revised Date : 2014.04.25 Page No. : 5/8
Typical Characteristics(Cont.)
Power Dissipation---PD(mW) Forward Current---IC(A)
700 600 500 400 300 200 100
0 0
Power Derating Curve
50 100 150 Ambient Temperature---TA(℃)
200
10
1
0.1
0.01 1
Safe Operating Area
1ms 100ms 1s DC
10 Forward Voltage---VCE(V)
100
BTN2222A3
CYStek Product Specification
CYStech Electronics Corp.
TO-92 Taping Outline
Spec. No. : C227A3 Issued Date : 2003.03.26 Revised Date : 2014.04.25 Page No. : 6/8
H2 H2
H2AH2A
D2 A
H3
L L1
F1F2 T2 P1 TP T1
H4 .