BTN2222AS3

CYStech Electronics Corp. www.DataSheet4U.com Spec. No. : C227S3 Issued Date : 2003.04.11 Revised Date : Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTN2222AS3 Description The BTN2222AS3 is designed for general purpose amplifier applications. It is housed in the SOT-323/SC-70 package which is designed for low power surface mount applications. Low VCE(sat) Low leakage current High cutoff frequency Complementary to BTP2907AS3 Symbol BTN2222AS3 Outline SOT-323 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation @Ta=25℃ Derate above 25℃ Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 75 40 6 600 150 (Note 1) Unit V V V mA mW °C °C 150 -55~+150 Note 1: when mounted on a FR-5 board with area measuring 1.0× 0.75× 0.062 in. BTN2222AS3 CYStek Product Specification CYStech Electronics Corp. www.DataSheet4U.com Spec. No. : C227S3 Issued Date : 2003.04.11 Revised Date : Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO ICEX IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 hFE1 hFE2 hFE3 *hFE4 *hFE5 fT Cob Min. 75 40 6 35 50 75 100 40 300 Typ. Max. 10 10 100 0.3 1.0 1.2 2.0 300 8 Unit V V V nA nA nA V V V V MHz pF Test Conditions IC=10μA IC=1mA IE=10μA VCB=60V VCE=60V,VEB(off)=3V VEB=3V IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V,...