BTN3501I3

CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTN3501I3 Features Low VCE(sat) High BVCEO Excellent current gain characteristics RoHS compliant package BVCEO IC RCESAT Spec. No. : C606I3 Issued Date : 2003.11.25 Revised Date : 2009.02.04 Page No. : 1/5 80V 8A 60mΩ Symbol BTN3501I3 Outline TO-251 B：Base C：Collector E：Emitter BB CC E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : 1. Single Pulse , Pw≦380μs,Duty≦2%. BTN3501I3 Symbol VCBO VCEO VEBO IC ICP IB PD PD RθJA RθJC Tj Tstg Limits 80 80 6 8 16 (Note 1) 1 1.5 20 83.3 6.25 150 -55~+150 Unit V V V A A W °C/W °C/W °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C606I3 Issued Date : 2003.11.25 Revised Date : 2009.02.04 Page No. : 2/5 Characteristics (Ta=25°C) Symbol BVCEO(SUS) ICES IEBO *VCE(sat) 1 *VCE(sat) 2 *VCE(sat) 3 *VBE(sat) 1 *VBE(sat) 2 *hFE 1 *hFE 2 *hFE 3 fT Cob ton tstg tf Min. 80 200 200 100 - Typ. 0.1 50 130 500 20 Max. 10 50 0.3 0.6 1.5 1.2 1.5 400 100 - Unit V μA μA V V V V V MHz pF ns ns ns Test Conditions IC=30mA, IB=0 VCE=80V, VBE=0 VEB=5V,IC=0 IC=2A, IB=200mA IC=8A, IB=400mA IC=5A, IB=50m A IC=2A, IB=200mA IC=8A, IB=800mA VCE=1V...