BTN3501J3

CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTN3501J3 BVCEO IC VCESAT Spec. No. : C606J3 Issued Date : 2003.10.07 Revised Date :2013.10.30 Page No. : 1/7 80V 8A 0.6V (max.) Features Low VCE(sat) High BVCEO Excellent current gain characteristics RoHS compliant package Symbol BTN3501J3 Outline TO-252(DPAK) B：Base C：Collector E：Emitter B CE Ordering Information Device BTN3501J3-XX-T3-S Package TO-252 (RoHS compliant package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name BTN3501J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C606J3 Issued Date : 2003.10.07 Revised Date :2013.10.30 Page No. : 2/7 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : 1. Single Pulse , Pw≦380μs,Duty≦2%. 2. When mounted on a PCB with the minimum pad size. Symbol VCBO VCEO VEBO IC ICP PD PD RθJA RθJC Tj Tstg Limits 80 80 6 8 16 (Note 1) 1.75 (Note 2) 20 71.4 (Note 2) 6.25 150 -55~+150 Unit V V V A W °C/W °C/W °C °C Characteristics (Ta=25°C) Sym...