CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTN3501J3
BVCEO IC VCESAT
Spec. No. : C606J3 Iss...
CYStech Electronics Corp.
Low Vcesat
NPN Epitaxial Planar
Transistor
BTN3501J3
BVCEO IC VCESAT
Spec. No. : C606J3 Issued Date : 2003.10.07 Revised Date :2013.10.30 Page No. : 1/7
80V 8A 0.6V (max.)
Features
Low VCE(sat) High BVCEO Excellent current gain characteristics RoHS compliant package
Symbol
BTN3501J3
Outline
TO-252(DPAK)
B:Base C:Collector E:Emitter
B CE
Ordering Information
Device BTN3501J3-XX-T3-S
Package
TO-252 (RoHS compliant package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products Product name
BTN3501J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C606J3 Issued Date : 2003.10.07 Revised Date :2013.10.30 Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃
Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature
Note : 1. Single Pulse , Pw≦380μs,Duty≦2%. 2. When mounted on a PCB with the minimum pad size.
Symbol
VCBO VCEO VEBO
IC ICP PD
PD
RθJA RθJC Tj Tstg
Limits
80 80 6 8 16 (Note 1) 1.75 (Note 2)
20
71.4 (Note 2) 6.25 150 -55~+150
Unit V V V
A
W
°C/W °C/W
°C °C
Characteristics (Ta=25°C)
Sym...