Document
CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
BTN3904A3
Spec. No. : C228A3 Issued Date : 2003.10.30 Revised Date : 2016.09.05 Page No. : 1/6
Description
• The BTN3904A3 is designed for general purpose switching amplifier applications. • Complementary to BTP3906A3. • Pb-free lead plating package.
Symbol
BTN3904A3
Outline
TO-92
B:Base C:Collector E:Emitter
EBC
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC Pd RθJA Tj Tstg
BTN3904A3
Limits
60 40 6 200 625 200 150 -55~+150
Unit
V V V mA mW °C/W °C °C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C228A3 Issued Date : 2003.10.30 Revised Date : 2016.09.05 Page No. : 2/6
Characteristics (Ta=25°C)
Symbol
BVCBO BVCEO BVEBO
ICEX *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2
*hFE1 *hFE2 *hFE3 *hFE4 *hFE5
fT Cob
Min.
60 40 6 0.65 40 70 100 60 30 300 -
Typ.
0.07 0.13 0.8 0.85 -
Max.
50 0.2 0.3 0.85 0.95 300 4
Unit
V V V nA V V V V MHz pF
Test Conditions
IC=10μA IC=1mA IE=10μA VCE=30V, VBE=-3V IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=1V, IC=100μA VCE=1V, IC=1mA VCE=1V, IC=10mA VCE=1V, IC=50mA VCE=1V, IC=100mA VCE=20V, IC=10mA, f=100MHz VCB=5V, IE=0A,f=1MHz
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
Ordering Information
Device BTN3904A3-0-TB-X
BTN3904A3-0-BK-X
Package
TO-92 (Pb-free lead plating package)
TO-92 (Pb-free lead plating package)
Shipping
2000 pcs / Tape & Box
1000 pcs/ bag, 10 bags/box, 10boxes/carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, TB :2000 pcs/tape & box; BK: 1000 pcs / bag, 10 bags/box, 10 boxes/carton
Product rank, zero for no rank products
Product name
BTN3904A3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C228A3 Issued Date : 2003.10.30 Revised Date : 2016.09.05 Page No. : 3/6
Typical Characteristics
Current Gain vs Collector Current 1000
HFE@VCE=1V
Saturation Voltage vs Collector Current 1000
VCE(SAT)@IC=10IB
100 100
Saturation Voltage---(mV)
Current Gain---HFE
10 0.1
1 10 100 Collector Current ---IC(mA)
1000
10000
Saturation Voltage vs Collector Current
VBE(SAT)@IC=10IB
1000
10 0.1
1000
1 10 100 Collector Current---IC(mA)
1000
Cutoff Frequency vs Collector Current
VCE=20V
Cutoff Frequency---fT(MHz)
Saturation Voltage---(mV)
Power Dissipation---PD(mW)
100 0.1
700 600 500 400 300 200 100
0 0
1 10 100 Collector Current ---IC(mA)
Power Derating Curve
1000
50 100 150 Ambient Temperature---TA(℃)
200
Collector Output Capacitance--Cob(pF)
100 1
10 Collector Current---IC(mA)
100
Outpur Capacitance vs Reverse-biased Voltage 10
f=1MHz
1 0.1
1 10 Reverse-biased Voltage---VCB(V)
100
BTN3904A3
CYStek Product Specification
CYStech Electronics Corp.
TO-92 Taping Outline
H2 H2
H2AH2A
D2 A
Spec. No. : C228A3 Issued Date : 2003.10.30 Revised Date : 2016.09.05 Page No. : 4/6
H3
L L1
F1F2 T2 P1 TP T1
H4 H H1 W1
W D1 D
P2
DIM
A D D1 D2 F1,F2 F1,F2 H H1 H2 H2A H3 H4 L L1 P P1 P2 T T1 T2 W W1 -
Item
Component body height Tape Feed Diameter Lead Diameter Component Body Diameter Component Lead Pitch F1-F2 Height Of Seating Plane Feed Hole Location Front To Rear Deflection Deflection Left Or Right Component Height Feed Hole To Bottom Of Component Lead Length After Component Removal Lead Wire Enclosure Feed Hole Pitch Center Of Seating Plane Location 4 Feed Hole Pitch Over All Tape Thickness Total Taped Package Thickness Carrier Tape Thickness Tape Width Adhesive Tape Width 20 pcs Pitch
Millimeters
Min. Max.
4.33 4.83
3.80 4.20
0.36 0.53
4.33 4.83
2.40 2.90
- ±0.3
15.50
16.50
8.50 9.50
-1
-1
- 27
- 21
- 11
2.50 -
12.50
12.90
5.95 6.75
50.30
51.30
- 0.55
- 1.42
0.36 0.68
17.50
19.00
5.00 7.00
253 255
BTN3904A3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C228A3 Issued Date : 2003.10.30 Revised Date : 2016.09.05 Page No. : 5/6
Recommended wave soldering condition
Product
Peak Temperature
Pb-free devices
260 +0/-5 °C
Soldering Time 5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Pb-free Assembly
Average ramp-up rate (Tsmax to Tp)
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max)
100°C 150°C 60-120 seconds
150°C 200°C 60-180 seconds
Time maintained above:
−Temperature (TL) − Time (tL)
183°C 60-150 seconds
217°C 60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
260 +0/-5 °C
Time within 5°C of actual peak temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
Time 25 °C to peak temperature
6 minutes max.
8 minutes max.
Note : Al.