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BTN3904N3 Dataheets PDF



Part Number BTN3904N3
Manufacturers Cystech Electonics
Logo Cystech Electonics
Description General Purpose NPN Epitaxial Planar Transistor
Datasheet BTN3904N3 DatasheetBTN3904N3 Datasheet (PDF)

CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTN3904N3 Spec. No. : C228N3-H Issued Date : 2002.05.11 Revised Date : 2019.11.21 Page No. : 1/7 Description  The BTN3904N3 is designed for general purpose switching amplifier applications.  Complementary to BTP3906N3.  ESD JEDEC rated HBM class 3B(>8KV).  Pb-free lead plating and halogen-free package Symbol BTN3904N3 Outline SOT-23 B:Base C:Collector E:Emitter Absolute Maximum Ratings (Ta=25C) Parameter Collect.

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CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTN3904N3 Spec. No. : C228N3-H Issued Date : 2002.05.11 Revised Date : 2019.11.21 Page No. : 1/7 Description  The BTN3904N3 is designed for general purpose switching amplifier applications.  Complementary to BTP3906N3.  ESD JEDEC rated HBM class 3B(>8KV).  Pb-free lead plating and halogen-free package Symbol BTN3904N3 Outline SOT-23 B:Base C:Collector E:Emitter Absolute Maximum Ratings (Ta=25C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation (TA=25C) Power Dissipation (TC=25C) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : Free air condition BTN3904N3 Symbol VCBO VCEO VEBO IC PD PD RθJA RθJC Tj Tstg Limits 60 40 6 200 225 (Note) 560 556 (Note) 223 150 -55~+150 Unit V V V mA mW mW C/W C/W C C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C228N3-H Issued Date : 2002.05.11 Revised Date : 2019.11.21 Page No. : 2/7 Characteristics (Ta=25C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 60 - - V IC=10μA BVCEO BVEBO 40 6 - - V IC=1mA - V IE=10μA ICEX - - 50 nA VCE=30V, VBE=-3V *VCE(sat)1 - 0.1 0.2 V IC=10mA, IB=1mA *VCE(sat)2 - 0.15 0.3 V IC=50mA, IB=5mA *VBE(sat)1 0.65 0.75 0.85 V IC=10mA, IB=1mA *VBE(sat)2 *hFE1 40 0.85 0.95 -- V IC=50mA, IB=5mA VCE=1V, IC=100μA *hFE2 70 - - VCE=1V, IC=1mA *hFE3 100 - 300 VCE=1V, IC=10mA *hFE4 60 - - VCE=1V, IC=50mA *hFE5 30 - - VCE=1V, IC=100mA fT 300 - - MHz VCE=20V, IC=10mA, f=100MHz Cob - - 4 pF VCB=5V, IE=0A,f=1MHz *Pulse Test: Pulse Width 380μs, Duty Cycle2% Ordering Information Device BTN3904N3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name BTN3904N3 CYStek Product Specification CYStech Electronics Corp. Recommended Soldering Footprint Spec. No. : C228N3-H Issued Date : 2002.05.11 Revised Date : 2019.11.21 Page No. : 3/7 BTN3904N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C228N3-H Issued Date : 2002.05.11 Revised Date : 2019.11.21 Page No. : 4/7 Characteristic Curves 10000 Saturation Voltage vs Collector Current VBE(SAT)@IC=10IB Current Gain vs Collector Current 1000 HFE@VCE=1V 1000 100 Current Gain---HFE Saturation Voltage-(mV) 100 0.1 1 10 100 Collector Current ---IC(mA) 1000 1000 Saturation Voltage vs Collector Current VCE(SAT)@IC=10IB 10 0.1 1 10 100 Collector Current ---IC(mA) 1000 10000 Cutoff Frequency vs Collector Current VCE=20V 100 1000 Cutoff Frequency(MHz) Saturation Voltage-(mV) 10 0.1 1 10 100 Collector Current---IC(mA) 1000 Power Dissipation---PD (mW) 250 200 150 100 50 0 0 BTN3904N3 Power Derating Curve 50 100 Ambient Temperature---TA(℃ ) 150 100 1 10 Collector Current---IC(mA) 100 CYStek Product Specification Reel Dimension CYStech Electronics Corp. Spec. No. : C228N3-H Issued Date : 2002.05.11 Revised Date : 2019.11.21 Page No. : 5/7 Carrier Tape Dimension BTN3904N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C228N3-H Issued Date : 2002.05.11 Revised Date : 2019.11.21 Page No. : 6/7 Recommended wave soldering condition Product Peak Temperature Pb-free devices 260 +0/-5 C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3C/second max. 3C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100C 150C 60-120 seconds 150C 200C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183C 60-150 seconds 217C 60-150 seconds Peak Temperature(TP) 240 +0/-5 C 260 +0/-5 C Time within 5C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6C/second max. 6C/second max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTN3904N3 CYStek Product Specification CYStech Electronics Corp. SOT-23 Dimension Spec. No. : C228N3-H Issued Date : 2002.05.11 Revised Date : 2019.11.21 Page No. : 7/7 Marking: 3 Date Code 3 12 XX 1TAE 1 Device Code 2 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style: Pin 1.Base 2.Emitter 3.Collector DIM Millimeters Min. Max. Inches Min. Max. DIM Millimeters Min. Max. Inches Min. Max. A 0.900 1.150 0.035 0.045 E1 2.250 2.550 0.089 0.100 A1 0.000 0.100 0.000 0.004 e 0.950 TYP 0.037 TYP A2 0.900 1.050 0..


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