BTN4401N3

CYStech Electronics Corp. www.DataSheet4U.com Spec. No. : C203N3-H Issued Date : 2003.06.06 Revised Date : Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTN4401N3 Description The BTN4401N3 is designed for using in driver stage of AF amplifier and general purpose switching application. High current , IC = 0.6A Low VCE(sat) , VCE(sat) = 0.2V(typ.) at IC/IB = 500mA/50mA Optimal for low Voltage operation Complementary to BTP4403N3. Symbol BTN4401N3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 60 40 6 0.6 225 150 -55~+150 Unit V V V A mW °C °C BTN4401N3 CYStek Product Specification CYStech Electronics Corp. www.DataSheet4U.com Spec. No. : C203N3-H Issued Date : 2003.06.06 Revised Date : Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICEX *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 *hFE4 *hFE5 fT Cob Min. 60 40 6 20 40 80 82 40 Typ. 0.2 250 6 Max. 100 0.4 0.75 0.95 1.2 390 Unit V V V nA V V V V MHz pF Test Conditions IC=100µA IC=1mA IE=10µA VCE=35V, VBE=-0.4V IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=1V, IC=0.1mA VCE=1V, IC=1mA VCE=1V, IC=10mA VCE=1V, IC=150mA VCE=2V, IC=500mA VCE=5V, IC=20mA, f=100MHz VCB=5V, f=1MHz *Pulse Test: Pulse Width ≤380...