BTN5551A3

CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTN5551A3 Spec. No. : C208A3 Issued Date : 2003.06.06 Revised Date : 2012.10.02 Page No. : 1/7 Description The BTN5551A3 is designed for general purpose applications requiring high breakdown voltage. Features High collector-emitter breakdown voltage. (BVCEO=160V @ IC=1mA) Complement to BTP5401A3 Symbol BTN5551A3 Outline TO-92 B：Base C：Collector E：Emitter EBC Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating Junction Temperature Range Storage Temperature Range Symbol VCBO VCEO VEBO IC PD Tj Tstg BTN5551A3 Limits 180 160 6 600 625 150 -55~+150 Unit V V V mA mW °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C208A3 Issued Date : 2003.06.06 Revised Date : 2012.10.02 Page No. : 2/7 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 *hFE4 fT Cob Min. 180 160 6 100 100 50 120 100 - Typ. 0.1 - Max. 50 50 0.15 0.2 1 1 390 6 Unit V V V nA nA V V V V MHz pF Test Conditions IC=100μA IC=1mA IE=10μA VCB=120V VEB=4V IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=5V, IC=1mA VCE=5V, IC=10mA VCE=5V, IC=50mA VCE=6V, IC=2mA VCE=20V, IC=10mA, f=100MHz VCB=20V, IE=0A,f=1MHz *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2% Classification Of hFE 4 Rank Range Q 120~270 R 180...