CYStech Electronics Corp.
www.DataSheet4U.com
Spec. No. : C231A3 Issued Date : 2003.04.12 Revised Date : Page No. : 1/4...
CYStech Electronics Corp.
www.DataSheet4U.com
Spec. No. : C231A3 Issued Date : 2003.04.12 Revised Date : Page No. : 1/4
High Voltage
NPN Epitaxial Planar
Transistor
BTN6517A3
Features
High Breakdown Voltage:BVCEO≥350V Complementary to BTP6520A3
Symbol
BTN6517A3 TO-92
B：Base C：Collector E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current---continuous Power Dissipation @TA=25℃ Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 350 350 6 500 625 150 -55~+150 Unit V V V mA mW °C °C
BTN6517A3
CYStek Product Specification
CYStech Electronics Corp.
www.DataSheet4U.com
Spec. No. : C231A3 Issued Date : 2003.04.12 Revised Date : Page No. : 2/4
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) 1 VCE(sat) 2 *VCE(sat) 3 *VCE(sat) 4 VBE(sat) 1 VBE(sat) 2 *VBE(sat) 3 VBE(on) hFE 1 hFE 2 *hFE 3 *hFE 4 *hFE 5 fT Cob Min. 350 350 6 20 30 30 20 15 40 Typ. Max. 50 50 0.3 0.35 0.5 1.0 0.75 0.85 0.9 2 200 200 200 6 Unit V V V nA nA V V V V V V V V MHz pF Test Conditions IC=100μA IC=1mA IE=10μA VCB=250V VEB=5V IC=10mA, IB=1mA IC=20mA, IB=2mA IC=30mA, IB=3mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=20mA, IB=2mA IC=30mA, IB=3mA VCE=10V, IC=100mA VCE=10V, IC=1mA VCE=10V,IC=10mA VCE=10V,IC=30mA VCE=10V,IC=50mA VCE=10V,IC=100mA VCE=20V, IC=10mA, f=20MHz VCB=20V, IE=0A,f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
BTN6517A3
CYStek Product Speci...
