CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
BTN8050A3
Spec. No. : C223A3 Issued Date : 20...
CYStech Electronics Corp.
General Purpose
NPN Epitaxial Planar
Transistor
BTN8050A3
Spec. No. : C223A3 Issued Date : 2003.07.30 Revised Date : 2013.05.21 Page No. : 1/5
Description
The BTN8050A3 is designed for use in output amplifier of portable radios in class B push pull operation.
Features
High collector current , IC = 1.5A Low VCE(sat) Complementary to BTP8550A3. Pb-free lead plating and halogen-free package
Symbol
BTN8050A3
Outline
TO-92
B:Base C:Collector E:Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC IB Pd Tj Tstg
BTN8050A3
ECB
Limits
40 25 6 1.5 0.5 625 150 -55~+150
Unit
V V V A A mW °C °C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C223A3 Issued Date : 2003.07.30 Revised Date : 2013.05.21 Page No. : 2/5
Characteristics (Ta=25°C)
Symbol
BVCBO BVCEO BVEBO
ICBO IEBO *VCE(sat) *VBE(sat) *VBE(on) *hFE1 *hFE2 *hFE3 fT Cob
Min.
40 25 6 120 160 80 100 -
Typ.
6
Max.
100 100 0.5 1.2 1 500 20
Unit
V V V nA nA V V V MHz pF
Test Conditions
IC=100μA IC=2mA IE=100μA VCB=35V VEB=6V IC=800mA, IB=80mA IC=800mA, IB=80mA VCE=1V, IC=10mA VCE=1V, IC=5mA VCE=1V, IC=100mA VCE=1V, IC=800mA VCE=10V, IC=50mA, f=100MHz VCB=10V, f=1MHz
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
Classification Of hFE2
Rank Range
D 160~320
E 250~500
Ordering Info...