BTN8050SA3

CYStech Electronics Corp. www.DataSheet4U.com Spec. No. : C222A3 Issued Date : 2003.10.07 Revised Date : Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTN8050SA3 Description The BTN8050SA3 is designed for use in output amplifier of portable radios in class B push pull operation. High collector current , IC = 700mA Low VCE(sat) Complementary to BTP8550SA3. Features Symbol BTN8050SA3 Outline TO-92 B：Base C：Collector E：Emitter ECB Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IB Pd Tj Tstg Limits 25 20 5 700 100 625 150 -55~+150 Unit V V V mA mA mW °C °C BTN8050SA3 CYStek Product Specification CYStech Electronics Corp. www.DataSheet4U.com Spec. No. : C222A3 Issued Date : 2003.10.07 Revised Date : Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(on) *hFE 1 *hFE 2 fT Cob Min. 25 20 6 100 150 Typ. 100 Max. 1 100 0.5 1 500 10 Unit V V V µA nA V V MHz pF Test Conditions IC=10µA IC=1mA IE=10µA VCB=20V VEB=5V IC=500mA, IB=50mA VCE=1V, IC=150mA VCE=1V, IC=150mA VCE=1V, IC=500mA VCE=10V, IC=20mA, f=100MHz VCB=10V, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE 1 Rank Range C 100~180 D 160~300 E 250~500 BTN8050SA3 CYStek Product Specification CYStech Electronics Corp. www.DataSheet4U.com Spec. No....