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BTNA14N3

Cystech Electonics

Gentral Purpose NPN Epitaxial Planar Transistor

CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTNA14N3 Spec. No. : C214N3-H Issued Date : 2...


Cystech Electonics

BTNA14N3

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CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTNA14N3 Spec. No. : C214N3-H Issued Date : 2002.05.11 Revised Date : 2015.03.18 Page No. : 1/5 Description The BTNA14N3 is a darlington amplifier transistor Complementary to BTPA64N3. Pb-free lead plating and halogen-free package Equivalent Circuit BTNA14N3 C Outline SOT-23 B B:Base C:Collector E:Emitter E Ordering Information Device BTNA14N3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 :3000 pcs/tape & reel, 7” reel Product rank, zero for no rank products Product name BTNA14N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C214N3-H Issued Date : 2002.05.11 Revised Date : 2015.03.18 Page No. : 2/5 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating Junction Temperature Range Storage Temperature Range Symbol VCBO VCES VCEO VEBO IC PD Tj Tstg Limits 100 60 60 12 0.5 225 -55~+150 -55~+150 Unit V V V V A mW °C °C Characteristics (Ta=25°C) Symbol BVCBO BVCES BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(on) *hFE1 *hFE2 fT Cob Min. 100 60 60 12 10K 20K 125 - Typ. - Max. 50 50 1.2 2.0 7 Unit V V V V nA nA V V MHz pF Test Conditions IC=100μA IC=100μA, VB...




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