BTNA44A3

CYStech Electronics Corp. High Voltage NPN Epitaxial Planar Transistor BTNA44A3 Spec. No. : C211A3 Issued Date : 2003.03.026 Revised Date :2013.11.20 Page No. : 1/6 Features High breakdown voltage. (BVCEO =400V) Low saturation voltage, typically VCE(sat) =60mV at IC/IB=10mA/1mA. Complementary to BTPA94A3 Pb-free lead plating and halogen-free package Symbol BTNA44A3 Outline TO-92 B：Base C：Collector E：Emitter EBC Ordering Information Device BTNA44A3-X-TB-G BTNA44A3-X-BK-G Package TO-92 (Pb-free lead plating package) TO-92 (Pb-free lead plating package) Shipping 2000 pcs / Tape & Box 1000 pcs/ bag, 10 bags/box, 10boxes/carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, TB :2000 pcs/tape & box; BK: 1000 pcs / bag, 10 bags/box, 10 boxes/carton Product rank, zero for no rank products Product name BTNA44A3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C211A3 Issued Date : 2003.03.026 Revised Date :2013.11.20 Page No. : 2/6 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation (TA=25℃) Junction Temperature Storage Temperature Note : *1. Single Pulse Pw≦380μs,Duty≦2%. Symbol VCBO VCEO VEBO IC PD Tj Tstg Limit 550 400 6 300 0.625 150 -55~+150 Unit V V V mA W °C °C Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO ICES VCE(sat) 1 VCE(sat) 2 *VCE(sat) 3 V...