BTNA44M3

CYStech Electronics Corp. High Voltage NPN Epitaxial Planar Transistor BTNA44M3 Spec. No. : C211M3 Issued Date : 2013.05.09 Revised Date : 2015.02.04 Page No. : 1/6 Features High breakdown voltage. (BVCEO = 400V) Low saturation voltage, typically VCE(sat) = 60mV at IC/IB=10mA/1mA. Complementary to BTPA94M3 Pb-free lead plating and halogen-free package Symbol BTNA44M3 Outline SOT-89 B：Base C：Collector E：Emitter BCE Ordering Information Device BTNA44M3-X-T2-G Package SOT-89 (Pb-free lead plating and halogen-free package) Shipping 1000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T2 :1000 pcs/tape & reel Product rank, zero for no rank products Product name BTNA44M3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C211M3 Issued Date : 2013.05.09 Revised Date : 2015.02.04 Page No. : 2/6 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Power Dissipation Thermal Resistance, Junction to Ambient Operating Junction Temperature Range Storage Temperature Range Symbol VCBO VCEO VEBO IC ICP PD RθJA Tj Tstg Limit 500 400 6 300 600 0.5 1 2 125 62.5 150 -55~+150 *1 *2 *3 *2 *3 Note : *1 Single pulse , Pw=10ms *2 Printed circuit board, glass epoxy board, 1.7mm thick with collector copper plating 10mm*10mm. *3 When mounted on a 40*40*0.7mm cer...