T2N4401

T2N4401 Low Power Bipolar Transistors www.DataSheet4U.com Features: NPN Silicon Planar Epitaxial Transistors. General purpose Switching Applications. TO-92 Plastic Package Dimensions A B C D E F G H K L Minimum 4.32 4.45 3.18 0.41 0.35 5° 1.14 12.70 1.982 Maximum 5.33 5.20 4.19 0.55 0.50 1.40 1.53 2.082 Dimensions : Millimetres Pin Configuration 1 = Emitter 2 = Base 3 = Collector Page 1 10/04/06 V1.0 T2N4401 Low Power Bipolar Transistors www.DataSheet4U.com Absolute Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Power Dissipation at Ta = 25°C Derate above 25°C Power Dissipation at TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Resistance Junction to Case Junction to Ambient Rth Rth (j-c) (j-a) Symbol VCEO VCBO VEBO IC T2N4401 40 60 6 600 625 5.0 1.5 12 -55 to +150 Unit V mA mW mW/°C W W/°C °C PD Tj, Tstg 83.3 °C/W 200 Electrical Characteristics (Ta = 25°C unless otherwise specified) Characteristic Collector Emitter Voltage IC = 1mA, IB = 0 Collector Base Voltage IC = 100µA, IE = 0 Emitter Base Voltage IE = 100µA, IC = 0 Base Cut off Current VCE = 35V, VEB = 0.4V Collector Cut off Current VCE = 35V, VEB = 0.4V Collector Emitter Saturation Voltage IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Base Emitter Saturation Voltage IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA *Pulse Test : Pulse Width: ≤300µs, Duty ≤2.0% Symbol BVCEO* BVCBO BVEBO IBEV <0...