2SD2627LS

Ordering number : ENN6478A 2SD2627LS NPN Triple Diffused Planar Silicon Transistor www.DataSheet4U.com 2SD2627LS Color TV Horizontal Deflection Output Applications Features Package Dimensions unit : mm 2079D [2SD2627] 10.0 3.2 3.5 7.2 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. 4.5 2.8 16.1 16.0 3.6 0.9 1.2 14.0 1.2 0.75 1 2 3 0.7 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220FI(LS) Ratings 1500 800 6 6 15 2.0 30 150 -55 to +150 Unit V V V A A W W °C °C 2.55 2.55 Conditions Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current Collector Sustain Voltage Emitter Cutoff Current Symbol ICBO ICES VCEO(sus) IEBO Conditions VCE=800V, IE=0 VCE=1500V, RBE=0 IC=100mA, IB=0 VEB=4V, IC=0 Ratings min typ max 10 1.0 800 40 130 Unit µA mA V mA 2.4 0.6 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure ...