G30N60B3D Datasheet: HGTG30N60B3D





G30N60B3D HGTG30N60B3D Datasheet

Part Number G30N60B3D
Description HGTG30N60B3D
Manufacture Fairchild Semiconductor
Total Page 8 Pages
PDF Download Download G30N60B3D Datasheet PDF

Features: HGTG30N60B3D Data Sheet www.DataSheet4U. com April 2004 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyper fast Diode The HGTG30N60B3D is a MOS ga ted high voltage switching device combi ning the best features of MOSFETs and b ipolar transistors. This device has the high input impedance of a MOSFET and t he low on-state conduction loss of a bi polar transistor. The much lower on-sta te voltage drop varies only moderately between 25oC and 150oC. The IGBT used i s the development type TA49170. The dio de used in anti-parallel with the IGBT is the development type TA49053. The IG BT is ideal for many high voltage switc hing applications operating at moderate frequencies where low conduction losse s are essential, such as: AC and DC mot or controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49172. P ackaging JEDEC STYLE TO-247 E C G Symb ol C Ordering Information PART NUMBER HGTG30N60B3D PACKAGE TO-247 BRAND G30N60B3D G E NOTE: When o.

Keywords: G30N60B3D, datasheet, pdf, Fairchild Semiconductor, HGTG30N60B3D, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent

HGTG30N60B3D
www.DataSheet4U.com
Data Sheet
April 2004
60A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
The HGTG30N60B3D is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25oC and 150oC. The IGBT used is the
development type TA49170. The diode used in anti-parallel
with the IGBT is the development type TA49053.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49172.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG30N60B3D
TO-247
G30N60B3D
NOTE: When ordering, use the entire part number.
Packaging
JEDEC STYLE TO-247
E
C
G
Symbol
C
G
E
Features
• 60A, 600V, TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2004 Fairchild Semiconductor Corporation
HGTG30N60B3D Rev. B2

                    
  






Index : 0  1  2  3   4  5  6  7   8  9  A  B   C  D  E  F   G  H  I  J   K  L  M  N   O  P  Q  R   S  T  U  V   W  X  Y  Z
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)