TIP131

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 80V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.0V(Max)@ IC= 4A ·Complement to Type TIP136 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 12 A IB Base Current- Continuous Collector Power Dissipation PC @TC=25℃ Collector Power Dissipation @Ta=25℃ Tj Junction Temperature 0.3 A 70 W 2 150 ℃ Tstg Storage Temperature Range -65~150 ℃ TIP131 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.785 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 63.5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 16mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A, IB= 30mA VBE(on) Base-Emitter ...