2SC3685

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High breakdown voltage ·High reliability ·Fast speed APPLICATIONS ·Ultrahigh-definition CRT display horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC3685 Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-pulse Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 6 16 125 150 -55~150 UNIT V V V A A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC3685 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=100mA; IB=0 IC=4A ;IB=1A IC=4A ;IB=1A VCE=1500V; RBE=0 VEB=4V; IC=0 IC=1A ; VCE=5V 8 MIN 800 5 1.5 1 1 TYP. MAX UNIT V V V mA mA SYMBOL VCEO(SUS) VCEsat VBEsat ICES IEBO hFE Switching times tstg tf Storage time IC=4A;IB1=0.8A; IB2=-1.6A V CC=200V Fall time 0.1 0.2 µs 3.0 µs 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power ...